6533b7d6fe1ef96bd1267010

RESEARCH PRODUCT

Gigahertz Single-Electron Pumping Mediated by Parasitic States

Alessandro RossiMikko MöttönenJanis TimoshenkoJevgeny KlochanAndrew S. DzurakVyacheslavs KashcheyevsFay E. HudsonSven RoggeGiuseppe C. Tettamanzi

subject

Electron capturePhysics::OpticsFOS: Physical sciencesBioengineering02 engineering and technologyElectron7. Clean energy01 natural sciencesQuantization (physics)0103 physical sciencesMesoscale and Nanoscale Physics (cond-mat.mes-hall)Quantum metrologyGeneral Materials Science010306 general physicsQuantumQCPhysicsta214Condensed Matter - Mesoscale and Nanoscale Physicsta114business.industryMechanical EngineeringQuantum dotsiliconGeneral Chemistry021001 nanoscience & nanotechnologyCondensed Matter PhysicsSemiconductorQuantum dotquantum electrical metrologysingle-electron pumpOptoelectronicsElectric current0210 nano-technologybusiness

description

In quantum metrology, semiconductor single-electron pumps are used to generate accurate electric currents with the ultimate goal of implementing the emerging quantum standard of the ampere. Pumps based on electrostatically defined tunable quantum dots (QDs) have thus far shown the most promising performance in combining fast and accurate charge transfer. However, at frequencies exceeding approximately 1 GHz, the accuracy typically decreases. Recently, hybrid pumps based on QDs coupled to trap states have led to increased transfer rates due to tighter electrostatic confinement. Here, we operate a hybrid electron pump in silicon obtained by coupling a QD to multiple parasitic states, and achieve robust current quantization up to a few gigahertz. We show that the fidelity of the electron capture depends on the sequence in which the parasitic states become available for loading, resulting in distinctive frequency dependent features in the pumped current.

10.1021/acs.nanolett.8b00874https://doi.org/10.1021/acs.nanolett.8b00874