Search results for "silicon"
showing 10 items of 1391 documents
Deformation of bubbles in silicon gel insulation under an alternating electric field
2019
The behavior of silicone gel under electrical stress plays a significant role in the reliability and durability of high voltage electronic power devices due to its widespread use for the insulation of IGBT modules and other components. The charges accumulation at the bubble boundaries leads to significant displacements due to the establishment of Coulombic forces and the high deformability of colloidal system. The main purpose of this work is to validate a numerical approach useful to investigate, for a given silicone gel, the non-linear relation between the applied HVDC stress and the electric field over an air bubble within the insulation bulk. The analysis has been carried out by means o…
Hydrodynamic Modeling of Transport and Noise Phenomena in Bipolar Two-Terminal Silicon Structures
1998
International audience
Development, Characterization, and Testing of a SiC-Based Material for Flow Channel Inserts in High-Temperature DCLL Blankets
2018
This work has been carried out within the framework of the EUROfusion Consortium. The views and opinions expressed herein do not necessarily reflect those of the European Commission.
Analysis of thin high-k and silicide films by means of heavy ion time-of-flight forward-scattering spectrometry
2006
The use of forward scattered heavy incident ions in combination with a time-of-flight-energy telescope provides a powerful tool for the analysis of very thin (5–30 nm) films. This is because of greater stopping powers and better detector energy resolution for heavier ions than in conventional He-RBS. Because of the forward scattering angle, the sensitivity is greatly enhanced, thus reducing the ion beam induced desorption during the analysis of very thin films. The drawback of forward scattering angle is the limited mass separation for target elements. We demonstrate the performance of the technique with the analysis of 25 nm thick NiSi films and atomic layer deposited 6 nm thick HfxSiyOz f…
Radiation resistance of nanolayered silicon nitride capacitors
2020
Abstract Single-layered and multi-layered 20–60 nm thick silicon nitride (Si3N4) dielectric nanofilms were fabricated using a low-pressure chemical vapour deposition (LPCVD) method. The X-ray photoelectron spectroscopy (XPS) confirmed less oxygen content in the multi-layered nanofilms. The capacitors with Si3N4 multilayer demonstrated a tendency to a higher breakdown voltage compared to the capacitors with Si3N4 single layer. Si3N4 nanofilms and capacitors with Si3N4 dielectric were exposed to 1 kGy dose of gamma photons. Fourier transform infrared (FTIR) spectroscopy analysis showed that no modifications of the chemical bonds of Si3N4 were present after irradiation. Also, gamma irradiation…
Radiation emission at channeling of electrons in a strained layer undulator crystal
2013
Abstract Experiments have been performed at the Mainz Microtron MAMI to explore the radiation emission spectra from a crystalline undulator at electron beam energies of 270 and 855 MeV. The epitaxially grown graded composition strained layer Si 1 - x Ge x undulator had 4-period with a period length λ u = 9.9 μ m . Spectra taken at the beam energy of 270 MeV at channeling in the undulating (110) planes exhibit a broad excess yield around the theoretically expected photon energies of 0.069 MeV, as compared with a flat silicon reference crystal. Model calculations on the basis of synchrotron-like radiation emission from finite single arc elements, taking into account also coherence effects, su…
Framework for complex quantum state generation and coherent control based on on-chip frequency combs
2018
Integrated frequency combs introduce a scalable framework for the generation and manipulation of complex quantum states (including multi-photon and high-dimensional states), using only standard silicon chip and fiber telecommunications components.
Determination of impurity distributions in ingots of solar grade silicon by neutron activation analysis
2017
AbstractIn a series of crystallization experiments, the directional solidification of silicon was investigated as a low cost path for the production of silicon wafers for solar cells. Instrumental neutron activation analysis was employed to measure the influence of different crystallization parameters on the distribution of 3d-metal impurities of the produced ingots. A theoretical model describing the involved diffusion and segregation processes during the solidification and cooling of the ingots could be verified by the experimental results. By successive etching of the samples after the irradiation, it could be shown that a layer of at least 60 μm of the samples has to be removed to get r…
Two prospective Li-based half-Heusler alloys for spintronic applications based on structural stability and spin–orbit effect
2017
To search for half-metallic materials for spintronic applications, instead of using an expensive trial-and-error experimental scheme, it is more efficient to use first-principles calculations to design materials first, and then grow them. In particular, using a priori information of the structural stability and the effect of the spin–orbit interaction (SOI) enables experimentalists to focus on favorable properties that make growing half-metals easier. We suggest that using acoustic phonon spectra is the best way to address the stability of promising half-metallic materials. Additionally, by carrying out accurate first-principles calculations, we propose two criteria for neglecting the SOI s…
Exotic SiO(2)H(2) Isomers: Theory and Experiment Working in Harmony.
2016
Replacing carbon with silicon can result in dramatic and unanticipated changes in isomeric stability, as the well-studied CO2H2 and the essentially unknown SiO2H2 systems illustrate. Guided by coupled-cluster calculations, three SiO2H2 isomers have been detected and spectroscopically characterized in a molecular beam discharge source using rotational spectroscopy. The cis,trans conformer of dihydroxysilylene HOSiOH, the ground-state isomer, and the high-energy, metastable dioxasilirane c-H2SiO2 are abundantly produced in a dilute SiH4/O2 electrical discharge, enabling precise structural determinations of both by a combination of isotopic measurements and calculated vibrational corrections. …