Search results for "silicon"
showing 10 items of 1391 documents
Low-Cost Synthesis of Bimodal Mesoporous Silica-Based Materials by Pseudomorphic Transformation.
2015
Nanoparticulate bimodal porous silica-based materials have been prepared through a surfactant-assisted procedure by using a simple template and starting from inexpensive sodium silicate as silicon source. Different procedural variables, such as pH or the nature and concentration of the surfactant, have been explored to optimize the preparative protocol, which allows, in turn, improved understanding of the formation process. The final bulk materials (called UVM-10 or M-UVM-10) are formed by pseudomorphic transformation of fresh silica-based xerogels under mild basic conditions. The UVM-10 architecture is constructed from small mesoporous nanoparticles, the aggregation of which generates a di…
Effect of finishing and polishing systems on the surface roughness and color change of composite resins
2020
Background This study is to examine the surface roughness and color changes occurring on composite resins following the application of different finishing and polishing systems. Material and Methods In our study, a total of 200 samples were prepared from composites resin (6×2 mm) containing supra-nano, submicron hybrid, nanohybrid, nano-ceramic and microhybrid filler. They were polished with diamond, aluminum oxide, silicon carbide finishing and polishing systems. The initial color values of composite samples were measured with a spectrophotometer and surface roughness values with a profilometer. After that, samples were immersed of coffee solution and color measurements were repeated on th…
Strain effects and phonon-plasmon coupled modes in Si-doped AlN
2009
The E 2h and A 1 (LO) phonon modes of AlN films grown on sapphire are analyzed by Raman scattering as a function of silicon doping for concentrations covering from 5.5 x 10 19 cm ―3 to 5.2 x 10 21 cm ―3 . For high doping levels the appearance of a mode around 520 cm ―1 indicates the precipitation of crystalline silicon in the samples and its inhomogeneous incorporation to the AlN layer. The frequency of this mode shifts to lower energies with doping, indicating that the silicon crystals are embedded in the AlN lattice and under tensile strain. On the other hand, the AlN phonon modes are blue-shifted due to the compressive strain as a result of the silicon incorporation. This strain is parti…
Electronic cooling and hot electron effects in heavily doped silicon-on-insulator film
2004
The influence of carrier concentration in silicon-on-insulator film on the thermal characteristics of semiconductor and performance of the superconductor-semiconductor-superconductor micro-coolers have been investigated at sub kelvin temperatures. The overheating of the lattice in heavily doped silicon film must be taken into account in the analysis of electron-phonon coupling experiment and operation of the cooler device. The heat flow between electrons and phonons in heavily doped silicon films is found to be proportional to T6, which is in accordance with theoretical prediction for dirty limit. Increasing the doping level in the semiconductor considerably increases both the efficiency of…
Capacitance study of thin film SnO2:F/p-type a-Si:H heterojunctions
2011
Abstract We characterized SnO 2 :F/p-type a-Si:H heterojunctions by current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature to determine the junction parameters. Samples with circular geometry and different diameters were characterized. The current scales with the junction area, and the current density J as a function of the voltage V is a slightly asymmetric curve with a super-linear behaviour (cubic law) for high voltages. Using a transmission line model valid for devices with circular geometry, we studied the effects of the SnO 2 :F resistivity on the measured capacitance when the SnO2:F layer works as an electrical contact. The measured C-V curve allows us t…
Biological oxygen apparent transmissibility of hydrogel contact lenses with and without organosilicon moieties.
2003
The instrument oxygen transmissibility (IOT) of organosilicon hydrogels, measured by electrochemical procedures, is 5-10 times larger than that of conventional hydrogels. A method is described that allows the estimation of the oxygen tension at the lens-cornea interface for closed- and open-eyelids situations by combining the IOT of the hydrogels and corneal parameters such as corneal thickness, corneal permeability and oxygen flux across the cornea. From these results the biological oxygen apparent transmissibility (BOAT) is obtained, an important parameter which an multiplication with the pressure of oxygen on the external part of the lens gives the oxygen flux onto the cornea. Contact le…
Design and realization of a portable multichannel continuous wave fNIRS
2014
A design and implementation of a portable functional Near InfraRed Spectroscopy embedded system prototype is described. In this theoretical and experimental work, we present an embedded system hosting 64 LED sources and 128 Silicon PhotoMultiplier detectors (SiPM). The elementary part of the structure is a flexible probe “leaf” consisting of 16 SiPMs, 4 couples of LEDs, each operating at two wavelengths, and a temperature sensor. The hardware system is based on an ARM main microcontroller that allows to perform both the switching time of LEDs and the acquisition of the SiPM outputs. The performed preliminary experimental tests achieved very promising results, thus demonstrating the effectiv…
<title>Advances in silica-based glasses for UV and vacuum UV laser optics</title>
2003
The origins of pre-existing and laser-induced ultraviolet (UV) and vacuum ultraviolet (VUV) optical absorption in state-of-the-art glassy silicon dioxide and the ways to improve it are reviewed. The main causes of pre-existing absorption in UV/VUV are oxygen vacancies, hydroxyl (silanol) groups, and strained bonds/localized states due to glassy disorder. The main absorption bands induced by UV/VUV excimer lasers are due to oxygen vacancies and due to silicon and oxygen dangling bonds (E'-centers and non-bridging oxygen hole centers, respectively). The optimized glasses are achieved via an intricate balance between a good stoichiometry, use of network modifiers (F or OH) to reduce the number…
SnO2 : Sb - A new material for high-temperature MEMS heater applications: Performance and limitations
2007
MEMS micro heater devices capable of long-term operation at temperatures up to 1000 degrees C are presented. The enhanced long-term stability has been achieved by employing antimony-doped tin oxide (SnO2:Sb) as a substitute for the conventionally used noble metal heater resistors. A detailed investigation of its high-temperature stability reveals that degradation is caused by out-diffusion of Sb impurities from the SnO2 film. (c) 2007 Elsevier B.V. All rights reserved.
Normal Metal-Insulator-Superconductor Tunnel Junctions With Pulsed Laser Deposited Titanium Nitride as Superconductor
2021
Here we report the fabrication of normal metal – insulator – superconductor (NIS) tunnel junctions using superconducting titanium nitride grown by pulsed laser deposition (PLD). The films for NIS junction fabrication were deposited on two different substrates: silicon nitride film and magnesium oxide. TiN films were characterized by means of electrical transport measurements, and films with superconducting transition temperatures above the liquid helium boiling point were chosen for fabrication of NIS junctions. Tunnel junction devices were successfully fabricated using electron beam lithography and shadow evaporation techniques. The insulator layer formation was performed using two differe…