Search results for "silicon"
showing 10 items of 1391 documents
Oxidation of silicon nanoparticles produced by nanosecond laser ablation in liquids
2014
We investigated nanoparticles produced by laser ablation of silicon in water by the fundamental harmonic (1064 nm) of a ns pulsed Nd:YAG. The silicon oxidation is evidenced by IR absorption features characteristic of amorphous SiO2 (silica). This oxide is highly defective and manifests a luminescence activity under UV excitation: two emission bands at 2.7 eV and 4.4 eV are associated with the twofold coordinated silicon, =SiO••.
Hydrodynamical aspects of the floating zone silicon crystal growth process
2014
Abstract 3D numerical modeling of dopant transport in the melt is carried out for the 100 mm floating zone silicon single crystal growth process. The axis-symmetric shape of the molten zone is calculated with the program FZone considering the coil and the high frequency (HF) electromagnetic (EM) field in 3D. Time dependent melt flow, temperature and dopant concentration fields are modeled using a specialized solver based on the open source code library OpenFOAM ® . The influence of the Marangoni coefficient in the boundary conditions on the melt velocity field is analyzed. The obtained shapes of the crystallization interface and resistivity profiles in the grown crystal are compared with ex…
Programmable Supercontinuum Laser Spectrum Generator Based on a Liquid-Crystal on Silicon Spatial Light Modulator
2021
Supercontinuum (SC) lasers combine a broadband light spectrum with the unique properties of single-mode lasers. In this work we present an optical system to spectrally filter a SC laser source using liquid-crystal on silicon (LCoS) spatial light modulators (SLM). The proposed optical system disperses the input laser and the spectrally separated components are projected onto the LCoS-SLM, where the state of polarization of each wavelength is separately modulated. Finally, recombining the modulated spectral components results in an output laser source where the spectrum can be controlled dynamically from a computer. The system incorporates two branches to independently control the visible (VI…
Modeling and parameter identification of crystalline silicon photovoltaic devices
2011
This paper tests the standard single-exponential model of the electrical characteristics of crystalline-Si photovoltaic devices, focusing on the (apparent) shunt current. Measured characteristics of illuminated polycrystalline-Si photovoltaic modules are modeled, and the apparent shunt current is analyzed. It is shown that an Ohmic-like behavior only takes place at voltages well below the maximum-power point. At higher voltages, the apparent shunt current quickly drops to negligible values. Modeling a crystalline-Si PV device with a fixed shunt resistance may therefore lead to underestimation of the maximum power exceeding 10% at certain irradiance levels.
WEAR MECHANISM OF CERAMIC TOOLS
1993
Abstract Cutting tests were performed using ceramic cutting tools under continuous cutting conditions. The tests were carried out on AISI 1040 steel, with cutting speeds ranging from 5 to 11 m s −1 . The wear mechanism was investigated for both crater and flank. Alumina-toughened zirconia of submicron grain size showed the best wear resistance. Alumina with TiC, TiN and ZrO 2 inclusions exhibited a wear resistance a little lower than the above-mentioned materials. Low chemical stability seems to be the reason for the poor performances of the silicon carbide whiskers-reinforced alumina, silicon nitride and the tungsten carbide inserts.
Deformation behavior and interfacial sliding in carbon/copper nanocomposite films deposited by high power DC magnetron sputtering
2015
Abstract Amorphous carbon–copper nanocomposite films with a carbon content from 7 to 40 at.% have been deposited onto steel, silicon and glass substrates using a high power (> 60 W/cm 2 ) and high-rate DC magnetron sputtering technique. XRD, Raman spectroscopy and TEM results confirm that the deposited films consist of copper nanograins (size
<title>Metallic and semiconducting nanowires: properties and architectures</title>
2003
Nanowires are expected to play an important role in future electronic, optical devices and nanoelectromechanical devices. Measuring the electrical and mechanical properties of nanowires is however a difficult task due to their small dimensions. Here we report the use of an in-situ microscopy technique, which combines transmission electron microscopy (TEM) with scanning probe microscopy (SPM), to investigate the electrical and mechanical properties of metallic and semiconductor nanowires. Additionally, in this paper we describe a novel approach for synthesizing mesoporous silicas with tunable pore diameters, wall thickness and pore spacings that can be used as tempates for the assembly of se…
Real-time manipulation of gold nanoparticles inside a scanning electron microscope
2011
Abstract The forces needed to overcome static friction and move 150 nm diameter Au nanoparticles on an oxidized Si substrate were measured in Normal and Shear oscillation modes inside a scanning electron microscope (SEM) in real time. The experimental setup consisted of a quartz tuning fork (QTF) mounted onto a high-precision 3D nanomanipulator used with a glued silicon or tungsten tip as a force sensor. Static friction was found to range from tens of nN to several hundred nN. Large variations in static friction values were related to differences in particle shape. Kinetic friction tended to be close to the detection limit and in most cases did not exceed several nN. The influence of therma…
Structural and Electrical Transport Properties of Si doped GaN nanowires
2016
The control and assessment of doping in GaN nanostructures are crucial for the realization of GaN based nanodevices. In this study, we have investigated a series of Si-doped GaN nanowires (NWs) grown by molecular beam epitaxy (MBE) with a typical dimension of 2–3 µm in length, and 20–200 nm in radius. In particular, high resolution energy dispersive X-ray spectroscopy (EDX) has illustrated a higher Si incorporation in NWs than that in two-dimensional (2D) layers and Si segregation at the edge of the NW with the highest doping. Moreover, direct transport measurements on single NWs have revealed a controlled doping with resistivity from 2 × 10−2 to 10−3 Ω.cm for Si doped NWs. Field effect tra…
Synthesis of 3D dendritic gold nanostructures assisted by a templated growth process: Application at the detection of traces of molecules
2020
International audience; Complex architectures like 3D gold dendritic nanostructures were synthesized by an in situ templated growth method using a thin film of a block copolymer [polystyrene-b-poly(4-vinylpyridine)] deposited onto silicon substrates. The overall study has demonstrated the strong link between the morphology, size, and distribution of the structures and the synthetic physicochemical parameters, such as pH, reaction temperature, concentration, and nature of reactants. A nonequilibirum state of the medium has been required to create a fractal growth of the gold structures onto a prepatterned gold-seeded surface and has led to a better control of the structures' surface coverage…