Search results for "silicon"
showing 10 items of 1391 documents
Micromorph silicon tandem solar cells with fully integrated 3D photonic crystal intermediate reflectors
2010
A 3D photonic intermediate reflector for textured micromorph silicon tandem solar cells has been investigated. In thin-film silicon tandem solar cells consisting of amorphous and microcrystalline silicon with two junctions of a-Si/c-Si, efficiency enhancements can be achieved by increasing the current density in the a-Si top cell providing an optimized current matching at high current densities. For an ideal photon-management between top and bottom cell, a spectrally-selective intermediate reflective layer (IRL) is necessary. We present the first fully-integrated 3D photonic thin-film IRL device incorporated on a planar substrate. Using a ZnO inverted opal structure the external quantum eff…
Vibrations of free and embedded anisotropic elastic spheres:Application to low-frequency Raman scattering of silicon nanoparticles in silica
2004
Vibrational mode frequencies and damping are calculated for an elastic sphere embedded in an infinite, homogeneous, isotropic elastic medium. Anisotropic elasticity of the sphere significantly shifts the frequencies in comparison to simplified calculations that assume isotropy. New low-frequency Raman light scattering data are presented for silicon spheres grown in a ${\mathrm{SiO}}_{2}$ glass matrix. Principal features of the Raman spectrum are not correctly described by a simple model of the nanoparticle as a free, isotropic sphere, but require both matrix effects and the anisotropy of the silicon to be taken into account. Libration, not vibration, is the dominant mechanism.
On-chip periodic arrays of optical traps based on the superposition of guided modes in silicon waveguides
2019
Since the pioneering work of Kawata and Tani [1], photonic waveguides have long been regarded as efficient optical conveyor belts for potential lab-on-a-chip applications. Indeed, near-field optical forces arising at the surface of such waveguides lead to efficient on-chip guided propulsion of micro- and even nanoparticles [2], as well as cells and bacteria in liquid solutions [3]. However, achieving stable and precisely controlled optical trapping of particles at the surface of a waveguide has been made possible only recently, and even then, it still requires complex photonic electro-optic tools to produce and handle on-chip standing waves [4].
Confocal spectromicroscopy of amorphous and nanocrystalline tungsten oxide films
2007
A Raman confocal spectromicroscopic system was used to study in situ phase composition and surface morphology in amorphous and nanocrystalline tungsten oxide and tungstate thin films, prepared on silicon and glass substrates by dc magnetron co-sputtering technique. The possible use of these films for the phase-change optical recording was demonstrated using 442 nm He–Cd laser with a variable power of up to 50 mW. The formation of nanocrystalline tungsten trioxide or tungstate phases was observed under the laser irradiation. These nanocrystalline phases show relatively strong Raman activity, which can be used for information reading purposes. A multilayer structure composed of several tungst…
Electrical and structural characterization of metal-oxide-semiconductor capacitors with silicon rich oxide
2001
Metal-oxide-semiconductor capacitors in which the gate oxide has been replaced with a silicon rich oxide (SRO) film sandwiched between two thin SiO2 layers are presented and investigated by transmission electron microscopy and electrical measurements. The grain size distribution and the amount of crystallized silicon remaining in SRO after annealing have been studied by transmission electron microscopy, whereas the charge trapping and the charge transport through the dots in the SRO layer have been extensively investigated by electrical measurements. Furthermore, a model, which explains the electrical behavior of such SRO capacitors, is presented and discussed. © 2001 American Institute of …
Carrier dynamics in epilayers and nanocolumns of ternary AlGaN with a tunable bandgap
2012
We apply several optical time-resolved techniques to investigate the dynamics of excess carriers in AlxGa1−xN nanocolumns grown on (111) silicon substrates and in thick AlxGa1−xN epitaxial layers deposited on sapphire. We demonstrate that carrier lifetime drops in nanocolumns by several times if compared to epilayers with similar Al content; in addition, recombination rate displays a strong nonlinearity on excitation. On the other hand, carrier localization effects observed in the epilayers completely disappear in nanocolumns.
Floating Zone Growth of Silicon
2015
Abstract The floating zone (FZ) technique changed from a crucible-free purification method into a growth technique mainly for high purity silicon crystals. The melt zone is inductively heated by the high frequency magnetic field of a sophisticated one-turn induction coil being the heart of the FZ growth. The needle-eye technique allows for crystals with large diameters beyond the capillary limitations of a cylindrical zone, but both electric breakthrough at the coil slit and bursting of the crystal by thermomechanical stress presently limit the diameter to 200 mm. A novel gFZ concept is depicted that works with granular silicon feedstock instead of expensive feed rods. The automation of the…
Frenkel defect process in amorphous silica
2011
Point defects strongly influence optical properties of synthetic amorphous silica (synthetic a-SiO2) used in excimer laser photolithography and their properties are intensively studied. Decomposition of an Si-O-Si bond into a pair of oxygen vacancy and interstitial oxygen species is an intrinsic defect process in a-SiO2. It is similar to the creation of vacancy-interstitial pairs in crystalline materials and is regarded as "Frenkel defect process" in an amorphous material. Oxygens are also known to be emitted from a-SiO2 surfaces under irradiation with vacuumultraviolet (VUV) light or electron beam. However, the anion part of the Frenkel pair in a-SiO2, interstitial oxygen atom, lacks relia…
Modeling and parameter identification of crystalline silicon photovoltaic devices
2011
In this paper the physical correctness of the standard single-exponential (one-diode) model of crystalline-Si photovoltaic devices is examined. In particular, we focus on the shunt current. I-V curves of in situ illuminated polycrystalline-Si photovoltaic modules are measured, and based on these measurements, we extract the shunt current. There is a certain voltage range in which the shunt current shows an Ohmic-like behavior, but the value of the resistance varies with irradiance and the quality of illumination. In addition, the Ohmic behavior takes place at voltages well below the maximum-power point (MPP). At higher voltages, the shunt current drops to negligible values. We conclude that…
Silicon resonator sensors: interrogation techniques and characteristics
1988
Interferometric and noninterferometric optical-fibre sensing systems for resonator vibrations are described. The quality factor variation with pressure, the temperature dependence of resonant frequency and the acceleration sensitivity are given for a double-ended tuning-fork based acceleratometer.