Search results for "sputter deposition"

showing 10 items of 93 documents

The role of Ga and Bi doping on the local structure of transparent zinc oxide thin films

2021

The experiment at HASYLAB/DESY was performed within the project I-20180036 EC. The research leading to this result has been supported by the project CALIPSOplus under the Grant Agreement 730872 from the EU Framework Programme for Research and Innovation HORIZON 2020. Filipe Correia is grateful to the Fundação para a Ciência e Tecnologia (FCT, Portugal) for the Ph.D. Grant SFRH/BD/111720/2015. Joana Ribeiro is grateful to the Project WinPSC - POCI-01-0247-FEDER-017796, for the research grant from the Agência Nacional de Inovação, co-funded by the European Regional Development Fund (ERDF), through the Operational Programme for Competitiveness and Internationalisation (COMPETE 2020), under the…

Materials scienceAbsorption spectroscopyCiências Naturais::Ciências FísicasThin films:Ciências Físicas [Ciências Naturais]:Chemical engineering [Engineering and technology]02 engineering and technology010402 general chemistry01 natural sciencessymbols.namesakeX-ray photoelectron spectroscopy:Engenharia química [Ciências da engenharia e tecnologias]Zinc oxide:NATURAL SCIENCES:Physics [Research Subject Categories]Materials ChemistryThin filmChemistry Chemical engineeringWurtzite crystal structureX-ray absorption spectroscopyScience & TechnologyMechanical EngineeringThermoelectricMetals and AlloysSputteringX-ray absorption spectroscopySputter deposition021001 nanoscience & nanotechnologyQuímica Engenharia química0104 chemical sciencesCrystallography13. Climate actionMechanics of Materialsddc:540Raman spectroscopysymbolsGrain boundary0210 nano-technologyRaman spectroscopy
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Light absorption and electrical transport in Si:O alloys for photovoltaics

2010

Thin films (100-500 nm) of the Si:O alloy have been systematically characterized in the optical absorption and electrical transport behavior, by varying the Si content from 43 up to 100 at. %. Magnetron sputtering or plasma enhanced chemical vapor deposition have been used for the Si:O alloy deposition, followed by annealing up to 1250 °C. Boron implantation (30 keV, 3-30× 1014 B/cm2) on selected samples was performed to vary the electrical sheet resistance measured by the four-point collinear probe method. Transmittance and reflectance spectra have been extracted and combined to estimate the absorption spectra and the optical band gap, by means of the Tauc analysis. Raman spectroscopy was …

Materials scienceAbsorption spectroscopyFour-pointAnalytical chemistryGeneral Physics and AstronomyAbsorption coefficientChemical vapor depositionBoron implantationSettore ING-INF/01 - ElettronicaSettore FIS/03 - Fisica Della Materiasymbols.namesakeElectrical resistivity and conductivityPlasma-enhanced chemical vapor depositionThin filmAbsorption (electromagnetic radiation)Electrical sheet resistanceSi contentSEMIINSULATING POLYCRYSTALLINE SILICON; SOLAR-CELLS; 3RD-GENERATION PHOTOVOLTAICS; OPTICAL-PROPERTIES; AMORPHOUS-SILICON; THIN-FILMS; CRYSTALLINEOptical absorptionProbe methodElectrical resistivityAlloy depositionSputter depositionElectrical transportsymbolsOxygen-rich siliconRaman spectroscopyOptical gapReflectance spectrumPhotovoltaic
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Local structure relaxation in nanocrystalline Ni1−xO thin films

2014

Abstract Non-stoichiometric nickel oxide (Ni 1 − x O) thin films were prepared by DC magnetron sputtering technique in mixed Ar/O 2 atmosphere and studied by synchrotron radiation Ni K-edge x-ray absorption spectroscopy, x-ray diffraction and scanning electron microscopy. The use of advanced modelling technique, combining classical molecular dynamics with ab initio multiple-scattering extended x-ray absorption fine structure calculations, allowed us to describe the structure relaxation and dynamics in nanocrystallites and to estimate their size and the concentration of nickel vacancies.

Materials scienceAbsorption spectroscopyNickel oxideMetals and AlloysAb initioAnalytical chemistrychemistry.chemical_element02 engineering and technologySurfaces and InterfacesSputter deposition021001 nanoscience & nanotechnology01 natural sciencesddc:070Nanocrystalline materialSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsNickelchemistry0103 physical sciencesMaterials ChemistryThin film010306 general physics0210 nano-technologyAbsorption (electromagnetic radiation)Thin Solid Films
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Investigations of the corrosion protection of ultrathin a-C and a-C:N overcoats for magnetic storage devices

2004

Abstract The thickness-dependent corrosion protection of carbon overcoats for magnetic hard disks can be analyzed by collecting X-ray absorption near edge structure (XANES) spectra at the Co L3-edge. Co is the main constituent of the protected magnetic media underneath. The spectra of the Co absorption edge display a strong peak for pure metallic, non-oxidized Co. This peak splits up into several sub-structures for oxidized Co. Therefore, XANES spectra provide a straightforward method to determine the overcoat thickness, leading to closed coverage and corrosion protection of the underlying material. A similar approach was carried out by X-ray photoelectron spectroscopy (XPS). Standard a-C:N…

Materials scienceAnalytical chemistrySurfaces and InterfacesGeneral ChemistrySputter depositionCondensed Matter PhysicsXANESSurfaces Coatings and FilmsCorrosionchemistry.chemical_compoundchemistryAbsorption edgeX-ray photoelectron spectroscopyMaterials ChemistryThin filmAbsorption (electromagnetic radiation)Carbon nitrideSurface and Coatings Technology
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Raman, electron microscopy and electrical transport studies of x-ray amorphous Zn-Ir-O thin films deposited by reactive DC magnetron sputtering

2015

Zn-Ir-O thin films on glass and Ti substrates were deposited by reactive DC magnetron sputtering at room temperature. Structural and electrical properties were investigated as a function of iridium concentration in the films. Raman spectrum of Zn-Ir-O (61.5 at.% Ir) resembles the spectrum of rutile IrO2, without any distinct features of wurtzite ZnO structure. SEM images indicated that morphology of the films surface improves with the iridium content. EDX spectroscopy and cross-section SEM images revealed that the films growing process is homogeneous. Crystallites with approximately 2-5 nm size were discovered in the TEM images. Thermally activated conductivity related to the variable range…

Materials scienceAnalytical chemistrychemistry.chemical_elementSputter depositionVariable-range hoppingAmorphous solidsymbols.namesakechemistrysymbolsIridiumCrystalliteThin filmRaman spectroscopyWurtzite crystal structureIOP Conference Series: Materials Science and Engineering
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Understanding the Conversion Process of Magnetron-Deposited Thin Films of Amorphous ReO$_x$ to Crystalline ReO$_3$ upon Thermal Annealing

2020

Crystal growth & design 20(9), 6147 - 6156 (2020). doi:10.1021/acs.cgd.0c00848

Materials scienceAnnealing (metallurgy)thin filmXASchemistry.chemical_elementconductive AFMMetalchemistry.chemical_compoundRhenium trioxide:NATURAL SCIENCES:Physics [Research Subject Categories]opticalXPSReO3General Materials ScienceThin filmmagnetron sputteringGeneral ChemistryRheniumSputter depositionCondensed Matter Physics540Amorphous solidresistivitychemistryChemical engineeringvisual_artddc:540Cavity magnetronSEMvisual_art.visual_art_medium
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Thin epitaxial films of the Heusler compound

2005

Abstract We prepared thin films of the Heusler compound Co 2 Cr 0.6 Fe 0.4 Al with the B2 structure on a-plane (1 1  2 ¯  0) Al 2 O 3 by sputtering. Films grown at high temperatures ( T ⩾ 600 ∘ C ) on Al 2 O 3 are fully epitaxial with the (1 1 0) and (1  1 ¯  0) planes of the film parallel to the (1 1  2 ¯  0) and (0 0 0 1) planes of the substrate, respectively. These epitaxial films possess a higher surface roughness than films grown at room temperature. The films show nearly rectangular hysteresis loops with coercive fields of the order of 10 mT. Magnetooptical Kerr measurements show an in-plane anisotropy of the magnetization with the easy axis in { 0 0 1 } direction. Hall measurements s…

Materials scienceCondensed matter physicsSputter depositionengineering.materialCoercivityCondensed Matter PhysicsHeusler compoundElectronic Optical and Magnetic MaterialsMagnetizationMagnetic anisotropySputteringHall effectengineeringThin filmJournal of Magnetism and Magnetic Materials
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Thermal conductivity of thermoelectric Al-substituted ZnO thin films

2013

ZnO:Al thin films with a low electrical resistivity were grown by magnetron sputtering on sapphire substrates. The cross-plane thermal conductivity (κ = 4.5 ± 1.3 W/mK) at room temperature is almost one order of magnitude lower than for bulk materials. The thermoelectric figure of merit ZT at elevated temperatures was estimated from in-plane power factor and the cross-plane thermal conductivity at room temperature. It is expected that the thermal conductivity drops with increasing temperature and is lower in-plane than cross-plane. Consequently, the thin film ZT is at least three times higher than for bulk samples at intermediate temperatures. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinh…

Materials scienceCondensed matter physicsbusiness.industryDopingSputter depositionCondensed Matter PhysicsThermoelectric materialsThermal conductivityElectrical resistivity and conductivityThermoelectric effectSapphireOptoelectronicsGeneral Materials ScienceThin filmbusinessphysica status solidi (RRL) - Rapid Research Letters
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Comparative study of air and vacuum annealing atmosphere towards Pt/Ti–W/SiO2 stability

2013

Abstract The thermal stability of Pt/Ti–W/SiO2 system was studied after annealing under air or vacuum in the present work. A Ti–W adhesive film (30 at. % Ti) was deposited on a SiO2 substrate followed by a thicker Pt layer. Depositions were performed using DC magnetron sputtering. The whole as-deposited films are metallic with a columnar growth of platinum deposit which totally wets the substrate. Whatever the atmosphere is, annealing at 500 °C for 12 h does not change the platinum state but modifies the morphology of platinum particles, the lateral average size of which increasing from less than 10 nm up to ca. 75 nm. Besides, a noticeable diffusion of metallic tungsten through Pt film is …

Materials scienceDiffusion barrierAnnealing (metallurgy)Scanning electron microscopeMetals and AlloysAnalytical chemistrychemistry.chemical_elementSurfaces and InterfacesSputter depositionTungstenSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsX-ray photoelectron spectroscopychemistryMaterials ChemistryThermal stabilityComposite materialPlatinumThin Solid Films
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Physical and electrochemical properties of LiFePO4/C thin films deposited by direct current and radiofrequency magnetron sputtering

2011

Abstract In this study, LiFePO 4 /C thin films with various contents of carbon were prepared by direct current (DC), radiofrequency (RF) and combined (DC/RF) magnetron sputtering methods. Influences of the composition, morphology and microstructure on the electrochemical properties of LiFePO 4 /C thin films are investigated by studying charge–discharge curves, cyclic voltammetry and electrochemical impedance spectroscopy. Cyclic voltammogram of the LiFePO 4 /C thin film showed the typical redox reaction peaks characterizing the electrochemical lithium insertion/extraction reactions in LiFePO 4 . Obtained LiFePO 4 /C thin films have relatively high charge capacities (127 mAh g − 1 ). It was …

Materials scienceDirect currentAnalytical chemistrychemistry.chemical_elementGeneral ChemistrySputter depositionCondensed Matter PhysicsMicrostructureElectrochemistryDielectric spectroscopychemistryGeneral Materials ScienceLithiumThin filmCyclic voltammetrySolid State Ionics
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