Search results for "sputter deposition"
showing 10 items of 93 documents
Synthesis and characterization of cobalt silicide films on silicon
2006
Cobalt silicide has emerged as a leading contact material in silicon technology due to its low resistivity, high stability and small lattice mismatch. In this study, 0.2-0.4 mu m thick Co films were deposited on Si(100) wafers by RF magnetron sputtering at room temperature, and annealed at temperatures from 600 to 900 degrees C in vacuum. As-deposited and annealed samples were characterized by Rutherford backscattering spectrometry (RBS), nuclear reaction analysis (NRA), X-ray diffraction (XRD) and scanning electron microscopy (SEM). Although the Si substrates were sputter cleaned before the deposition, all the samples showed a thin oxide layer at the Si/Co interfaces. Annealing up to 700 d…
Mechanical behavior and limits to the microhardness testing of hard multilayer coatings on soft substrates
2000
Multilayer coatings of (Ti, Al) N x , (Ti, C)N x and (Nb, C)N x with bilayer thickness of 0.8-8 nm have been deposited by reactive sputtering on stainless steel substrates. Vickers microhardness measurements in the load range of 3.10 -3 to 1 N were performed using a self-adjusting tester. It has been shown that in order to obtain the true hardness of multilayer coatings on a softer substrate, the indentation depth should not exceed about 10% of the coating thickness. Indentation criteria for polycrystalline, amorphous and nanostructured multilayer coatings are compared. The obtained criterion for multilayer coatings is close to that for amorphous films.
Electrochemical fabrication of metal/oxide/conducting polymer junction
2011
After discovery of conducting polymers and the possibility to modify their electrical properties from insulating to metallic like behavior by doping and a careful choice of the processing conditions, a large amount of research effort has been devoted to the theoretical understanding of their solid state properties as well as to exploit the possible application of conducting polymers in many technological fields including large area organic electronics, polymer photovoltaic cell, and sensors. 1-4 Organic thin film transistors appear very promising devices for the development of low cost, flexible, and disposable plastic electronics. In order to reduce the operating voltage it has been sugges…
Formation and evolution of self-organized Au nanorings on indium-tin-oxide surface
2011
This work reports on the formation of Au nanoclusters and on their evolution in nanoring structures on indium-tin-oxide surface by sputtering deposition and annealing processes. The quantification of the characteristics of the nanorings (surface density, depth, height, and width) is performed by atomic force microscopy. The possibility to control these characteristics by tuning annealing temperature and time is demonstrated establishing relations which allow to set the process parameters to obtain nanostructures of desired morphological properties for various technological applications. © 2011 American Institute of Physics.
Compositional dependence of element-specific magnetic moments in Ni2MnGa films
2009
Element-specific magnetic moments were investigated for epitaxial Ni2Mn1+xGa1−x and (Ni2MnGa)1−x(Co2FeSi)x Heusler films using x-ray absorption spectroscopy and x-ray circular magnetic dichroism in transmission. The epitaxial films of the Ni2MnGa-derived compositions were prepared by dc-sputtering on Al2O3 substrates at 773 K. X-ray diffraction confirms a (1 1 0) oriented growth. An increase in the Mn concentration reduces the magnetic spin moment of both Mn and Ni. An increase in the content of Co2FeSi in the Ni2MnGa compound leads to an increase in the Mn and Ni spin moments and to a decrease in Tm for 5% Co2FeSi and finally to a suppression of the phase transition for 20% Co2FeSi. The or…
Magnetic and structural phase transitions by annealing in tetragonal and cubic Mn3Ga thin films
2021
Abstract Thermal Annealing is a simple and powerful tool to improve the crystallinity in general or promote the functionality for peculiar purposes, ultimately leading to metastable states with lower energy. We report the annealing effect focusing primarily on the structural and magnetic properties of two different Mn3Ga thin films. One is the D022 tetragonal ferrimagnetic phase Mn3Ga, and the other is the disordered-L12 cubic antiferromagnetic phase Mn3Ga. They were grown by RF/DC magnetron sputtering method on MgO substrate. After deposition, the thin films were annealed at various temperatures (200, 300, 400, 500, and 600 °C) and Ar pressures (10−3, 10−1, and 103 Torr). We find that the …
Morphology and magnetoresistance of Co2Cr0.6Fe0.4Al-based tunnelling junctions
2009
Some ferromagnetic Heusler compounds are theoretically predicted to be half metallic materials, i.e. to be characterized by a huge spin polarization at the Fermi energy. We investigate the correlations between junction preparation conditions, morphology and transport properties of planar MgO/Co2Cr0.6Fe0.4Al/AlOx/Co/CoOx/Pt tunnelling junctions. Epitaxial Co2Cr0.6Fe0.4Al thin films were deposited by dc and rf magnetron sputtering on different buffer layers (Cr, Fe, MgO) on MgO(1 0 0) substrates. By RHEED, LEED and in situ STM investigations different surface morphologies were observed. Atomically flat surfaces with Co2Cr0.6Fe0.4Al unit cell sized steps (B2 structure) were obtained by rf sput…
Field- and irradiation-induced phenomena in memristive nanomaterials
2016
The breakthrough in electronics and information technology is anticipated by the development of emerging memory and logic devices, artificial neural networks and brain-inspired systems on the basis of memristive nano-materials represented, in a particular case, by a simple 'metal-insulator-metal' (MIM) thin-film structure. The present article is focused on the comparative analysis of MIM devices based on oxides with dominating ionic (ZrOx, HfOx) and covalent (SiOx, GeOx) bonding of various composition and geometry deposited by magnetron sputtering. The studied memristive devices demonstrate reproducible change in their resistance (resistive switching - RS) originated from the formation and …
TCO/Ag/TCO transparent electrodes for solar cells application
2014
Among transparent electrodes, transparent conductive oxides (TCO)/metal/TCO structures can achieve optical and electrical performances comparable to, or better than, single TCO layers and very thin metallic films. In this work, we report on thin multilayers based on aluminum zinc oxide (AZO), indium tin oxide (ITO) and Ag deposited by RF magnetron sputtering on soda lime glass at room temperature. The TCO/Ag/TCO structures with thicknesses of about 50/10/50 nm were deposited with all combinations of AZO and ITO as top and bottom layers. While the electrical conductivity is dominated by the Ag intralayer irrespective of the TCO nature, the optical transmissions show a dependence on the natur…
Interface Transparency of Nb/Pd Layered Systems
2004
We have investigated, in the framework of proximity effect theory, the interface transparency T of superconducting/normal metal layered systems which consist of Nb and high paramagnetic Pd deposited by dc magnetron sputtering. The obtained T value is relatively high, as expected by theoretical arguments. This leads to a large value of the ratio $d_{s}^{cr}/ \xi_{s}$ although Pd does not exhibit any magnetic ordering.