Search results for "sputter deposition"
showing 10 items of 93 documents
Interface transparency and proximity effect in Nb/Cu triple layers realized by sputtering and molecular beam epitaxy
2004
We have investigated, in the framework of the proximity effect theory, the interface transparency T between Nb and Cu in the case of high quality Nb/Cu trilayers fabricated by molecular beam epitaxy (MBE) and sputtering deposition techniques. The obtained T values do not seem to be strongly influenced by the fabrication methods but more by the intrinsic properties of the two metals; a slightly higher value for T has even been deduced for the MBE prepared samples. The proximity effect in these samples has also been studied in the presence of an external magnetic field. In the parallel configuration a significant shift towards lower values of the 2D–3D crossover temperature has been observed …
Microwave Properties of Nb/PdNi/Nb Trilayers
2012
We combine wideband (1-20 GHz) Corbino disk and dielectric resonator (8.2 GHz) techniques to study the microwave properties in Nb/PdNi/Nb trilayers, grown by UHV dc magnetron sputtering, composed by Nb layers of nominal thickness $d_S$=15 nm, and a ferromagnetic PdNi layer of thickness $d_F$= 1, 2, 8 and 9 nm. We focus on the vortex state. Magnetic fields up to $H_{c2}$ were applied. The microwave resistivity at fixed $H/H_{c2}$ increases with $d_F$, eventually exceeding the Bardeen Stephen flux flow value.
Magnetoresistivity and crystal structure of epitaxial La0.67Ca0.33MnO3 films
1998
Abstract We investigated thin-film growth of doped manganites by sputter deposition on SrTiO 3 (1 0 0), MgO (1 0 0) and r -plane Al 2 O 3 (1 0 1¯2) substrates and found an in-plane-oriented growth. The unit cell of the films showed distortions from the simple cubic perovskite structure, represented by a tetragonal unit cell with a′ = b′ = √2 a ; c′ = 2 a . By scanning electron microscopy we investigated the growth morphology of the films. We determined the magnetotransport properties above and below room temperature. Transport at high temperatures is best described by polaron hopping.
Nitrogen plasma pressure influence on the composition of TiNxOy sputtered films
2002
Thin films of TiNxOy were deposited by d.c. magnetron sputtering on glass substrates using an (Ar+,N2) plasma and Ti target. The N2 partial pressure was changed from 2.3 × 10−4 mbar to 4.6 × 10−3 mbar in order to obtain films with increasing nitrogen contents. X-ray photoelectron spectroscopy was used to determine the as-deposited composition. The presence of oxygen, which is probably due to contamination from the residual atmosphere in the vacuum chamber, is always detected, both in the surface layers and in the bulk of the films, confirming the formation of TiNxOy. When the nitrogen partial pressure was increased, a maximum for the nitrogen content in the films was reached, corresponding …
Superconducting properties of Nb thin films deposited on porous silicon templates
2008
Porous silicon, obtained by electrochemical etching, has been used as a substrate for the growth of nanoperforated Nb thin films. The films, deposited by UHV magnetron sputtering on the porous Si substrates, inherited their structure made of holes of 5 or 10 nm diameter and of 10 to 40 nm spacing, which provide an artificial pinning structure. The superconducting properties were investigated by transport measurements performed in the presence of magnetic field for different film thickness and substrates with different interpore spacing. Perpendicular upper critical fields measurements present peculiar features such as a change in the H_c2(T) curvature and oscillations in the field dependenc…
X-ray absorption study of Ce?Ti oxide films
2001
Abstract X-ray absorption measurements at the Ce L 3 , L 1 and Ti K-edges have been done to study local structure and electronic properties of CeO 2 –TiO 2 thin films produced by reactive d.c. magnetron sputtering. The local environment around titanium and cerium ions can be described as pyramid-like and cube-like polyhedra, respectively, and the films are amorphous (correlation radius about 10 A). The analysis of Ce L 3 -edge XANES data has shown that the position of the Ce 4f 1 5d and 4f 0 5d states progressively shift towards lower energies with decreasing cerium dioxide content in the thin films.
Sputtering deposition and characterization of Ru-doped WO3 thin films for electrochromic applications
2003
Mixed tungsten-ruthenium oxide thin films were prepared for the first time by dc magnetron co-sputtering technique and were studied by cyclic voltammetry, optical transmission measurements, Raman spectroscopy and the W L3 and Ru K edges X-ray absorption spectroscopy (XAS) in comparison with pure WO3 films. The Ru concentration was varied in the range from 0 to 28 at.%. XAS results suggest that the average local structure around both tungsten and ruthenium ions remains unchanged within experimental accuracy in all samples, moreover, for tungsten ions, it resembles that of pure WO3 films. However, the presence of the ruthenium ions affects the electrochemical and optical properties of the fil…
<title>Iridium L<formula><inf><roman>3</roman></inf></formula>-edge and oxygen K-edge x-ray absorption spec…
2003
Structural investigations of the short range order around iridium and oxygen ions in nanocrystalline iridium oxide thin films, prepared by dc magnetron sputtering technique, were performed by x-ray absorption spectroscopy. The Ir L3-edge extended x-ray absorption fine structure and the O K-edge x-ray absorption near edge structure signals were measured at room temperature and analyzed within ab initio multiple-scattering and full-multiple-scattering approaches, respectively. The x-ray absorption spectroscopy results indicate the presence in the films of orderd regions - nanocrystals, having a size of about 10 angstrom and a structure rather close to that in crystalline iridium oxide IrO2. S…
<title>Local structure of Ta-Re mixed oxide thin films studied by x-ray absorption spectroscopy</title>
2003
Mixed Ta-Re oxide thin films were synthesized for the first time by dc magnetron co-sputtering. Local environment around tantalum and rhenium atoms was studied by the Ta and Re L3-edges x-ray absorption spectroscopy in pure Ta2O5 and mixed Ta-Re oxide thin films (Ta:Re = 50:50, 38:62, 20:80 as determined from the ratio of the Ta-to-Re absorption edges). It was found that rhenium atoms are four-fold coordinated by oxygen atoms with R(Re-O) = 1.74 ± 0.01 Å and the mean square relative displacement (MSRD) σ2 = 0.0012 ± 0.0005 Å2. In pure Ta2O5 thin film, tantalum ions are coordinated by six oxygen atoms at R(Ta-O) = 2.02 ± 0.01 Å with the MSRD σ2 = 0.010 ± 0.001 Å2. The addition of rhenium ion…
<title>Cerium-containing counter electrodes for transparent electrochromic devices</title>
1997
Films of Me-Ce oxide (Me: Ti, Zr, Sn, W) and of Ni-Ce hydroxide were produced by reactive magnetron co-sputtering. Li intercalation in Me-Ce oxide, and H exchange in Ni-Ce hydroxide, were accomplished electrochemically. Electrochromism was quenched in proportion with the Ce content in Me-Ce oxide. Films of Zr-Ce (and to some extent Ti-Ce) oxide were able to serve as fully transparent counter electrodes, of much interest for transparent electrochromic devices. In Ni-Ce hydroxide, the Ce addition enhanced the capacity for charge exchange.