Search results for "sputtering"
showing 10 items of 136 documents
Emergence of the stripe-domain phase in patterned permalloy films
2016
The occurrence of stripe domains in ferromagnetic Permalloy (Py=Fe$_{20}$Ni$_{80}$) is a well known phenomenon which has been extensively observed and characterized. This peculiar magnetic configuration appears only in films with a thickness above a critical value ($d_{cr}$), which is strongly determined by the sputtering conditions (i.e. deposition rate, temperature, magnetic field). So far, $d_{cr}$ has usually been presented as the boundary between the homogeneous (H) and stripe-domains (SD) regime, respectively below and above $d_{cr}$. In this work we study the transition from the H to the SD regime in thin films and microstructured bridges of Py with different thicknesses. We find the…
Ferroelectric Properties and Crystal Structure of YBa2Cu3O7/BaxSr(1−x)TiO3 Heterostructures
1997
ABSTRACTEpitaxial YBa2Cu3O7/Ba0.5Sr0.5TiO3 (YBCO/BST) and YBCO/BaTiO3 (BTO) heterostructures were prepared by dc and rf sputtering on SrTiO3 and MgO substrates. The YBCO/BTO bilayers exhibit an inductive superconducting transition temperature of 85 K and the ferroelectric phase transition of BST shows a Curie-Weiss temperature of 310 K. Microstructure was investigated by x-ray-diffraction and atomic force microscopy. In this work we also studied the insulator's conductivity and the contribution of domain walls to permittivity.
Band gap narrowing and dielectric constant enhancement of (NbxTa(1-x))2O5 by electrochemical nitrogen doping
2018
Abstract Anodic films were grown to 5 V and 50 V on Nb, Ta and Ta-Nb sputtering deposited alloys in 0.1 M ammonium biborate solutions in order to induce N incorporation. Their properties were compared to those of N free anodic films grown to the same formation voltages in 0.1 M NaOH. Photoelectrochemical measurements evidenced the presence of optical transitions at energy lower than the band gap of the oxides, attributed to localized states located close to the valence band mobility edge of the films, generated by N 2p orbitals, with consequent narrowing of the band gap. Since N incorporation occurs in the outer 70% of the anodic films, the dependence of the measured photocurrent as a funct…
Photocurrent Spectroscopy Applied to the Characterization of Passive Films on Sputter-Deposited Ti-Zr Alloys
2008
Abstract A photoelectrochemical investigation on thin (⩽13 nm) mixed oxides grown on sputter-deposited Ti–Zr alloys of different composition by air exposure and by anodizing (formation voltage, UF = 4 V/SCE) was carried out. The experimental results showed that the optical band gap, E g opt , increases with increasing Zr content in both air formed and anodic films. Such behaviour is in agreement with the theoretical expectation based on the correlation between the band gap values of oxides and the difference of electronegativity of their constituents. The flat band potential of the mixed oxides was found to be almost independent on the Ti/Zr ratio into the film and more anodic with respect …
Photocurrent spectroscopy study of passive films on hafnium and hafnium–tungsten sputtered alloys
2003
Abstract Anodic and air-formed films on sputtered Hf and W–Hf alloys of different composition have been investigated by Rutherford back scattering, photocurrent spectroscopy (PCS) and transmission electron microscopy (TEM) techniques. In alkaline solutions the PCS data suggest the formation on Hf metal of a duplex layer with anodic hafnia covered by an external layer of composition close to HfO(OH) 2 . This last compound is also present on Hf air-formed films. In acidic solutions the initial oxy-hydroxide film disappears at high anodising potentials ( V f >10 V). In the case of W–Hf alloys films of different composition and semiconducting behaviour are formed by air exposure or by anodising…
Photoelectrochemical evidence of Nitrogen Incorporation during Anodizing of Sputtering-Deposited Al-Ta alloys
2016
Anodic films were grown to 20 V on sputtering-deposited Al–Ta alloys in ammonium biborate and borate buffer solutions. According to glow discharge optical emission spectroscopy, anodizing in ammonium containing solution leads to the formation of N containing anodic layers. Impedance measurements did not evidence significant differences between the dielectric properties of the anodic films as a function of the anodizing electrolyte. Photoelectrochemical investigation allowed evidencing that N incorporation induces a red-shift in the light absorption threshold of the films due to the formation of allowed localized states inside their mobility gap. The estimated Fowler threshold for the intern…
Photocatalysis of rhodamine B and methyl orange degradation under solar light on ZnO and Cu2O thin films
2020
We report the photocatalytic properties of ZnO and Cu2O thin films deposited on glass substrates at room temperature by DC sputtering and pulsed laser deposition. The photoactivity of the films was investigated through the degradation of rhodamine B (RhB) and methyl orange (MO) under solar light. In order to select the most suitable film of ZnO for the of RhB and MO degradation, the relationship between the characteristics (e.g. energy levels and defects concentration) of ZnO films and their effectiveness in the photocatalytic yield of RhB and MO been studied, where several films were deposited by using different oxygen partial pressures (PO2: 0.05–1.3 mbar), while Cu2O films were grown und…
Non-destructive diagnostics of thin fissile layers
2003
We have developed a non-destructive nuclear technique useful for the diagnostic of thin layers of fissile element. The method is based on the correlation between the fission fragment energy losses and the distortion of the energy spectrum of the alpha-particles emerging from the layer itself. We have also measured the sputtering rate of atoms from a fission layer which can be the cause of an important degradation in a working apparatus.
Size dependent light absorption modulation and enhanced carrier transport in germanium quantum dots devices
2015
Quantum confinement in closely packed arrays of Ge quantum dots (QDs) was studied for energy applications. In this work, we report an efficient tuning mechanism of the light harvesting and detection of Ge QDs. Thin films of SiGeO alloys, produced by rf-magnetron sputtering, were annealed at 600 degrees C in N-2 to induce precipitation of small amorphous Ge QDs into the oxide matrix. Varying the Ge content, the QD size was tailored between 2 and 4 nm, as measured by high resolution transmission electron microscopy. X-ray photoelectron spectroscopy (XPS) measurements indicate the formation of pure SiO2, as well as the presence of a sub-stoichiometric Ge oxide shell at the QD interface. Light …