Search results for "temperature"
showing 10 items of 3798 documents
Temperature Dependent Suns-V<inf>oc</inf> of Multicrystalline Silicon Solar Cells from Different Ingot Positions
2018
This paper presents temperature dependent Suns- Voc measurements on multicrystalline silicon cells originating from different ingot positions. The effective lifetime is found to increase for all cells when the temperature is increased from 25°C to 6°C. However, cells from the top of the ingot show a considerably larger increas 40–50% for illumination conditions of 0.1-1 Sun, compared to an increase of 20-30% observed for cells from the bottom. The decrease in Voc with increasing temperature is found to be lower for cells from the top of the ingot compared to cells from the bottom. The temperature coefficient of the Voc is found to vary 5% along the ingot at 1 Sun, highlighting the influence…
Gel combustion synthesis and magnetic properties of CoFe2O4, ZnFe2O4, and MgFe2O4 using 6-aminohexanoic acid as a new fuel
2020
Abstract For the first time, 6-aminohexanoic acid is used as an alternative fuel in the synthesis of the spinel ferrites with compositions CoFe2O4, ZnFe2O4 and MgFe2O4 using gel combustion synthesis with different oxidizer-to-fuel (O/F) ratios. The gel precursors were studied by differential thermal analysis and thermogravimetry (DTA/TG), which showed that the ignition temperature depends on the gel precursor, being around 230 °C, 130 °C and 275 °C for CoFe2O4, ZnFe2O4, and MgFe2O4, respectively. These results showed than the 6-aminohexanoic acid has an ignition temperature lower than the urea and the citric acid when were used in the synthesis of the spinel ferrites by gel combustion. More…
Reduced temperature sensitivity of multicrystalline silicon solar cells with low ingot resistivity
2016
This study presents experimental data on the reduction of temperature sensitivity of multicrystalline silicon solar cells made from low resistivity ingot. The temperature coefficients of solar cells produced from different ingot resistivities are compared, and the advantages of increasing the net doping are explained.
Raman characterization of Pb2Na1−xLaxNb5−xFexO15 and Pb0.5(5−x)LaxNb5−xFexO15 (0≤x≤1) solid solutions
2011
Abstract The ferroelectric compounds Pb 2 Na 1− x La x Nb 5− x Fe x O 15 and Pb 0.5(5− x ) La x Nb 5− x Fe x O 15 (0≤ x ≤1) with the tungsten bronze type structure have been investigated using Raman spectroscopy. The evolution of the spectra as a function of composition at room temperature is reported. In the frequency range 200–1000 cm −1 three main A 1 phonons around 240 ( υ 1 ), 630 ( υ 2 ) and 816 ( υ 3 ) cm −1 were observed. The broadening of the Raman lines for high values of x originates from a significant structural disorder. This is in good agreement with the relaxor character of these compositions. The lowest-frequency part of the spectra, below 180 cm −1 , reveals a structural ch…
Spectroscopic study of ion temperature in minimum-B ECRIS plasma
2019
Experimentally determined ion temperatures of different charge states and elements in minimum-B confined electron cyclotron resonance ion source (ECRIS) plasma are reported. It is demonstrated with optical emission spectroscopy, complemented by the energy spread measurements of the extracted ion beams, that the ion temperature in the JYFL 14 GHz ECRIS is 5–28 eV depending on the plasma species and charge state. The reported ion temperatures are an order of magnitude higher than previously deduced from indirect diagnostics and used in simulations, but agree with those reported for a quadrupole mirror fusion experiment. The diagnostics setup and data interpretation are discussed in detail to …
Atomic Layer Deposition of LiF Thin Films from Lithd, Mg(thd)2, and TiF4 Precursors
2013
Lithium fluoride is an interesting material because of its low refractive index and large band gap. Previously LiF thin films have been deposited mostly by physical methods. In this study a new way of depositing thin films of LiF using atomic layer deposition (ALD) is presented. Mg(thd)2, TiF4 and Lithd were used as precursors, and they produced crystalline LiF at a temperature range of 300–350 °C. The films were studied by UV–vis spectrometry, field emission scanning electron microscopy (FESEM), X-ray diffraction (XRD), atomic force microscopy (AFM), time-of-flight elastic recoil detection analysis (ToF-ERDA), and energy dispersive X-ray spectroscopy (EDX). In addition, film adhesion was t…
Hydrodynamic Modeling of Transport and Noise Phenomena in Bipolar Two-Terminal Silicon Structures
1998
International audience
Annealing behaviour of aluminium-implanted InP
2000
The annealing behaviour of aluminium has been studied in single-crystal InP implanted with 40 and 120 keV 27Al+ ions. The implantation doses were 1 x 1015 and 1 x 1016 cm-2. The aluminium concentration profiles were determined by two techniques, Secondary ion mass spectrometry (SIMS) and the nuclear resonance broadening technique (NRB) which was used for checking purposes. The usability of the SIMS technique for profiling Al rich layers was studied. Significant inconsistencies were observed in the SIMS profiles with the high dose implanted samples. The 120 keV, 1 x 1016 cm-2 implanted samples were subject to annealing in argon atmosphere in the temperature range 380–600°C. Redistribution an…
Development, Characterization, and Testing of a SiC-Based Material for Flow Channel Inserts in High-Temperature DCLL Blankets
2018
This work has been carried out within the framework of the EUROfusion Consortium. The views and opinions expressed herein do not necessarily reflect those of the European Commission.
EPR and optical spectroscopy of neutron-irradiated Gd3Ga5O12 single crystals
2020
Abstract In this paper, we have performed comparative analysis of EPR, optical absorption (OA) and luminescence spectra for a series of Gd3Ga5O12 (GGG) single crystals irradiated with fast neutrons with fluencies varied from 1016 to 1020n/cm2. In a crystal irradiated with the maximum neutron fluence, the EPR spectra demonstrated the formation of several paramagnetic defects. In particular, EPR spectrum shows a strong resonance at (effective) g ≈ 1.4 with practically isotropic behavior in the crystal rotation around the [1 1 1] direction (magnetic field being perpendicular to [1 1 1]) and several weaker lines in the g ≈ 1.1–2.6 region, which show more pronounced angular dependences. While th…