Search results for "thin film"

Synthesis of Lead Zirconate Antiferroelectric Thin Films by Sol-Gel Processing

2000

A modified methoxyethanol sol-gel process was used for the production of PbZrO3 thin films. The new route uses lead oxide [PbO] instead of lead acetate [Pb(OAc)2]. Through the use of this method it is possible to prepare single-phase perovskite materials with improved properties. Examples are given for PbZrO3 thin layers deposited by the spin coating process on TiO2/Pt/TiO2/SiO2/Si substrates from various sols where lead acetate or lead oxide are used as the starting lead compound. The preferred orientation and the perovskite phase content of the films were studied using X-ray diffraction analysis (XRD). Scanning electron microscopy (SEM) was used for microstructural characterization of the…

Pyridine-Incorporated Dihexylquaterthiophene: A Novel Blue Emitter for Organic Light Emitting Diodes (OLEDs)

2012

The synthesis and characterisation of 2,5-bis(5′-hexyl-[2,2′-bithiophen]-5-yl)pyridine (Th4PY) and its use as a blue emitter in organic light emitting diodes (OLEDs) is reported. Th4PY was synthesised in high yield using a straightforward Suzuki coupling route with commercially available starting materials. As Th4PY is both soluble and has low molecular weight, blue OLEDs were fabricated using both spin-coating and vacuum deposition thin film processing techniques to study the effect of processing on device performance. OLED devices using a spin-coated layer consisting of 4′,4′′-tris(N-carbazolyl)triphenylamine (TCTA) and 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (PBD) as a …

Conductive Directly Fused Poly(Porphyrin) Coatings by Oxidative Chemical Vapour Deposition - From Single- to Triple-Fused

2019

Alkylsilyl compounds as enablers of atomic layer deposition: analysis of (Et3Si)3As through the GaAs process

2016

A new chemistry has been developed to deposit GaAs, the quintessential compound semiconductor. The ALD process is based on a dechlorosilylation reaction between GaCl3 and (Et3Si)3As. Characteristic ALD growth was demonstrated, indicating good applicability of the alkylsilyl arsenide precursor. ALD of GaAs produced uniform, amorphous and stoichiometric films with low impurity content. This was done with saturating growth rates and an easily controlled film thickness. Crystallization was achieved by annealing. Even though the growth rate strongly decreased with increasing deposition temperature, good quality film growth was demonstrated at 175 to 200 °C, indicating the presence of an ALD wind…

Eterogiunzioni bulk a base di polimeri di borani per celle fotovoltaiche flessibili

2009

Manipulation of antiferromagnetic domain distribution in Mn2 Au by ultrahigh magnetic fields and by strain

2017

Evidence for a spin reorientation in antiferromagnetic (AFM) Mn2Au thin films induced by high magnetic fields as well as by the application of in-plane mechanical stress is provided. The AFM domain population in the samples was investigated by resonant X-ray Magnetic Linear Dichroism (XMLD) measurements at the L3 edge of Mn using a variable linear polarization of the incident photon beam. As grown samples show no XMLD signal due to averaging over a random AFM domain distribution. After the exposure to a 70 T in-plane magnetic field a clear XMLD signal indicating the generation of a preferential AFM domain orientation is obtained. The same type of XMLD signal is observed when the thin films …

Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films

2018

A comparative study of mechanical properties and elemental and structural composition was made for aluminum nitride thin films deposited with reactive magnetron sputtering and plasma enhanced atomic layer deposition (PEALD). The sputtered films were deposited on Si (100), Mo (110), and Al (111) oriented substrates to study the effect of substrate texture on film properties. For the PEALD trimethylaluminum–ammonia films, the effects of process parameters, such as temperature, bias voltage, and plasma gas (ammonia versus N2/H2), on the AlN properties were studied. All the AlN films had a nominal thickness of 100 nm. Time-of-flight elastic recoil detection analysis showed the sputtered films t…

Water dissociation and water-gas shift energetics on MgO, MgO/Ag and Au/MgO/Ag surfaces

2011

Water dissociation and the energetics of the WGS reaction on a bulk MgO, an Ag supported MgO thin film and Au/MgO/Ag surfaces is studied based on the density functional theory. The literature results for water splitting on MgO and MgO/Ag surfaces with a step type defect are repeated and further analysis on the origin of the energetically favored dissociative water adsorption are made. The reactivity towards water dissociation on the stepped MgO and MgO/Ag surfaces is attributed to four contributing factors: 1. The change in the interlayer distance of the surface in dissociative adsorption is diminished on the stepped surfaces compared to the flat surfaces. On the flat surfaces the dissociat…

Eumelanin Coating of Silica Aerogel by Supercritical Carbon Dioxide Deposition of a 5,6-Dihydroxyindole Thin Film

2018

Eumelanin integration in silica aerogel (SA) was achieved via supercritical adsorption of 5,6-dyhydroxyindole (DHI) from CO2. Notably, after the supercritical treatment, DHI evolved towards spontaneous polymerization, which resulted in uniform pigment development over the SA. The new material was characterized for its morphological and physicochemical properties, disclosing the formation of a eumelanin-like coating, as confirmed by UV&ndash

Comparison between Focused Electron/Ion Beam-Induced Deposition at Room Temperature and under Cryogenic Conditions

2019

This article belongs to the Special Issue Multi-Dimensional Direct-Write Nanofabrication.