Search results for "thin film"
showing 10 items of 1200 documents
Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineering
2020
The suitability of Ti as a band gap modifier for &alpha
Performance evaluation Anodic Alumina Membranes-based fuel cell: CsH2PO4 pore-filler as proton conductor operating at room temperature
2008
Bi-2212 and Y123 highly curved single-crystal-like objects: whiskers, bows and ring-like structures
2012
High-temperature superconducting objects of Bi2Sr2CaCu2O8 and Y Ba2Cu3O7 highly curved in the ab-plane, such as curved/kinked whiskers, bows and ring-like structures, were obtained within a solid?liquid?solid (SLS) grass-like growth mechanism. As-grown objects are crystals with three-dimensional epitaxy similar to conventional single crystals: they can be viewed as crystal parts ?cut? from a conventional rectangular crystal. Between our curved objects and conventional crystals, whiskers or thin films there are some differences in the superconducting properties induced only by the shape factors and no new physics is observed. Some details of the growth mechanism are discussed, emphasizing cu…
Development of niobium-based superconducting junctions
2012
This thesis presents a review of publications which mainly focuses on the fabrication and performance of Nb-based normal metal-insulator-superconductor (NIS) tunnel junctions and superconductor-normal metal-superconductor (SNS) Josephson junctions at low temperatures. The Cu/AlOx-Al/Nb based NIS double tunnel junctions were successfully fabricated using conventional electron beam lithography combined with multi-angle thermal evaporation of metals in ultra high vacuum. The subgap characteristics of these junctions showed expected temperature dependence from 0.2 K to 5 K with a good thermometry sensitivity 0.2-0.3 mV/K. Signatures of small electronic cooling effects were observed near the Nb …
Normal-Metal–Insulator–Superconductor Tunnel Junction With Atomic-Layer-Deposited Titanium Nitride as Superconductor
2015
<title>Electrochromism of W-oxide-based films: some theoretical and experimental results</title>
1995
We survey some recent work related to electrochromic W-oxide-based thin films. The electronic structure of cubic (perovskite) WO3 and HWO3 was calculated from first principles. It was found, among other things, that hydroxide formation was energetically favored. Experimental studies were made on films prepared by reactive magnetron sputtering in Ar + O2 with and without CF4 addition and substrate bias. Structural studies by atomic force microscopy, x-ray diffraction, infrared reflectance spectroscopy, and Raman spectroscopy indicated that the electron bombardment associated with a positive substrate bias led to grain growth and partial crystallization while maintaining a high density of W e…
Effect of Fe-incorporation on Structural and Optoelectronic Properties of Spin Coated p/n Type ZnO Thin Films
2020
Simulation studies of electronic transport in a-Si:H thin film solar cells
2009
The thin film solar cells in Hydrogenated Amorphous Silicon (a-Si:H) are attractive for cheaper production and used in ultra low cost, high volume applications but have a relatively lower electronic performance. These limitations are mainly due to properties of the a-Si:H and relies on the production technique. In this study we investigate the physical mechanisms which are on the basis of the electronic transport and their relation with the technological processes. The transport-simulation computer program ATLAS (Silvaco) has been used to examine the role of the mid gap defect density in determining the performance of a-Si:H p-i-n homojunction solar cell.
Vacuum-Deposited Cesium Tin Iodide Thin Films with Tunable Thermoelectric Properties
2022
Most current thermoelectric materials have important drawbacks, such as toxicity, scarceness, and peak operating temperatures above 300 °C. Herein, we report the thermoelectric properties of different crystalline phases of Sn-based perovskite thin films. The 2D phase, Cs2SnI4, is obtained through vacuum thermal deposition and easily converted into the black β phase of CsSnI3(B-β CsSnI3) by annealing at 150 °C. B-β CsSnI3is a p-type semiconductor with a figure of merit (ZT) ranging from 0.021 to 0.033 for temperatures below 100 °C, which makes it a promising candidate to power small electronic devices such as wearable sensors which may be interconnected in the so-called Internet of Things. T…