Search results for "thin film"

showing 10 items of 1200 documents

Enhanced light scattering in Si nanostructures produced by pulsed laser irradiation

2013

An innovative method for Si nanostructures (NS) fabrication is proposed, through nanosecond laser irradiation (lambda = 532 nm) of thin Si film (120 nm) on quartz. Varying the laser energy fluences (425-1130 mJ/cm(2)) distinct morphologies of Si NS appear, going from interconnected structures to isolated clusters. Film breaking occurs through a laser-induced dewetting process. Raman scattering is enhanced in all the obtained Si NS, with the largest enhancement in interconnected Si structures, pointing out an increased trapping of light due to multiple scattering. The reported method is fast, scalable and cheap, and can be applied for light management in photovoltaics. (C) 2013 AIP Publishin…

Innovative methodMaterials sciencePhysics and Astronomy (miscellaneous)Settore ING-INF/01 - ElettronicaLight scatteringQuartz SiliconSettore FIS/03 - Fisica Della Materialaw.inventionsymbols.namesakeLight managementSi nanostructures NanostructurelawDewetting proceLaser energieDewettingThin filmbusiness.industryScatteringIsolated clusterLaserInterconnected structureSemiconductorsymbolsOptoelectronicsbusinessRaman spectroscopyPhotovoltaicRaman scattering
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Constitution and conductivity of metalloporphyrin tapes

2020

Inorganic Chemistry540 Chemistry and allied sciencesChemical engineeringChemistryConstitutionmedia_common.quotation_subject540 ChemieOxidative coupling of methaneChemical vapor depositionConductivityThin filmmedia_common
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Mechanical Behaviors of (As2S3)100-x(AgI)x Bulk Glasses and Thin Films

2012

Inorganic ChemistryChemistryThin filmComposite materialZeitschrift für anorganische und allgemeine Chemie
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Influence of twinned structure on the morphology of CdTe(111) layers grown by MOCVD on GaAs(100) substrates

2003

Abstract The morphology and structure of CdTe(1 1 1) layers grown on GaAs(1 0 0) by MOCVD have been studied by atomic force microscopy (AFM) and X-ray texture analysis. Growth conditions have been chosen so that mirror-like CdTe layers are obtained. Layers whose growth times vary between 10 s and 2 h have been investigated. The X-ray texture analysis shows that the CdTe layers grown on GaAs substrates that were thermally treated at 580°C for 30 min in a H 2 atmosphere exhibit a (1 1 1) preferential orientation and are twinned. This twinned structure of the (1 1 1)CdTe layer which is observed as 60° rotated triangular crystallites in the AFM images strongly influences the surface morphology.…

Inorganic ChemistryCrystallographyChemistryMaterials ChemistryHeterojunctionCrystalliteMetalorganic vapour phase epitaxyTexture (crystalline)Chemical vapor depositionThin filmCondensed Matter PhysicsCrystal twinningCadmium telluride photovoltaicsJournal of Crystal Growth
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Photocatalytic Activity of TiO2 Coatings Obtained at Room Temperature on a Polymethyl Methacrylate Substrate

2022

Titanium dioxide (TiO2) coatings have a wide range of applications. Anatase exhibits hydrophilic, antimicrobial, and photocatalytic properties for the degradation of organic pollutants or water splitting. The main challenge is to obtain durable anatase nanoparticle coatings on plastic substrates by using straightforward approaches. In the present study, we revealed the preparation of a transparent TiO2 coating on polymethylmethacrylate (PMMA), widely used for organic optical fibres as well as other polymer substrates such as polypropylene (PP), polystyrene (PS), and polycarbonate (PC). The films were spin-coated at room temperature without annealing; therefore, our approach can be used for …

Inorganic Chemistryphotocatalysis; titanium dioxide; thin filmthin filmtitanium dioxideOrganic Chemistry:NATURAL SCIENCES::Physics [Research Subject Categories]General MedicinePhysical and Theoretical ChemistryphotocatalysisMolecular BiologySpectroscopyCatalysisComputer Science ApplicationsInternational Journal of Molecular Sciences
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Unusual stoichiometry control in the atomic layer deposition of manganese borate films from manganese bis(tris(pyrazolyl)borate) and ozone

2016

The atomic layer deposition (ALD) of films with the approximate compositions Mn3(BO3)2 and CoB2O4 is described using MnTp2 or CoTp2 [Tp ¼ tris(pyrazolyl)borate] with ozone. The solid state decomposition temperatures of MnTp2 and CoTp2 are 370 and 340 C, respectively. Preparative-scale sublimations of MnTp2 and CoTp2 at 210 C/0.05 Torr afforded >99% recoveries with <0.1% nonvolatile residues. Self-limited ALD growth was demonstrated at 325 C for MnTp2 or CoTp2 with ozone as the coreactant. The growth rate for the manganese borate process was 0.19 A˚ /cycle within the ALD window of 300–350 C. The growth rate for the cobalt borate process was 0.39–0.42 A˚ /cycle at 325 C. X-ray diffraction of …

Inorganic chemistrymetallic thin filmschemistry.chemical_element02 engineering and technologyManganese010402 general chemistry01 natural sciencesAtomic layer depositionX-ray photoelectron spectroscopyThin filmBoronotsonita116ta114Surfaces and Interfacesatomikerroskasvatus021001 nanoscience & nanotechnologyCondensed Matter Physics0104 chemical sciencesSurfaces Coatings and FilmsAmorphous solidozonechemistryatomic layer depositionmanganese borate0210 nano-technologyCobaltStoichiometry
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An argon ion beam milling process for native AlOx layers enabling coherent superconducting contacts

2017

We present an argon ion beam milling process to remove the native oxide layer forming on aluminum thin films due to their exposure to atmosphere in between lithographic steps. Our cleaning process is readily integrable with conventional fabrication of Josephson junction quantum circuits. From measurements of the internal quality factors of superconducting microwave resonators with and without contacts, we place an upper bound on the residual resistance of an ion beam milled contact of 50$\,\mathrm{m}\Omega \cdot \mu \mathrm{m}^2$ at a frequency of 4.5 GHz. Resonators for which only $6\%$ of the total foot-print was exposed to the ion beam milling, in areas of low electric and high magnetic …

Josephson effectMaterials scienceFabricationPhysics and Astronomy (miscellaneous)Ion beamFOS: Physical scienceschemistry.chemical_element02 engineering and technology01 natural sciencesSuperconductivity (cond-mat.supr-con)Resonator0103 physical sciencesThin film010306 general physicsSuperconductivityQuantum PhysicsArgonbusiness.industryCondensed Matter - Superconductivity021001 nanoscience & nanotechnologychemistryOptoelectronicsQuantum Physics (quant-ph)0210 nano-technologybusinessLayer (electronics)Applied Physics Letters
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Investigations on the c-axis transport properties of YBa/sub 2/Cu/sub 3/O/sub 7-δ//PrBa/sub 2/Cu/sub 3/O/sub 7-δ/ thin film superlattices

1997

In this paper we report on the c-axis transport properties of YBa/sub 2/Cu/sub 3/O/sub 7-/spl delta///PrBa/sub 2/Cu/sub 3/O/sub 7-/spl delta// superlattices. We describe the preparation, characterisation and patterning of thin film superlattices into suitable mesa structures via standard photolithography. Resistive measurements were carried out which point towards an inhomogenous current distribution in the normal state resistance. Below T/sub c/, the c-axis properties determine the temperature dependent resistance. Resonant tunneling is observed with no Josephson current.

Josephson effectResistive touchscreenMaterials scienceHigh-temperature superconductivityCondensed matter physicsSuperlatticeSputter depositionCondensed Matter PhysicsElectronic Optical and Magnetic Materialslaw.inventionlawElectrical and Electronic EngineeringThin filmPhotolithographyQuantum tunnellingIEEE Transactions on Appiled Superconductivity
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Bi2Sr2Ca2Cu3O10+δ based Josephson junctions and SQUIDs

1996

Josephson junctions and SQUIDs on SrTiO3 bicrystal substrates were prepared from epitaxial Bi2Sr2Ca2Cu3O10+δ thin films with critical temperatures around 95K. The current-voltage characteristics are well described by the resistively and capacitively shunted junction model.I c R n products of 50μV at 77K and 0.7m V at 4.2K have been reached. TheI c (B) dependence is symmetric toB=0 with anI c suppression of 90% in the first minimum. Nevertheless it turns out, that the junctions are inhomogeneous on a μm scale. The flux-voltage transfer function of a SQUID reached 2.7μV/Ф0 at 78K.

Josephson effectSQUIDPi Josephson junctionMaterials scienceCondensed matter physicsJosephson phaselawGeneral Physics and AstronomyJosephson energyThin filmEpitaxylaw.inventionCzechoslovak Journal of Physics
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Anisotropic chemical etching of semipolar \{10\bar {1}\bar {1}\}\mbox {/} \{10\bar {1}{+}1\} ZnO crystallographic planes: polarity versus dangling bo…

2009

ZnO thin films grown by metal?organic vapor phase epitaxy along the nonpolar direction and exhibiting semipolar facets have been chemically etched with HCl. In order to get an insight into the influence of the ZnO wurtzite structure in the chemical reactivity of the material, Kelvin probe microscopy and convergent beam electron diffraction have been employed to unambiguously determine the absolute polarity of the facets, showing that facets are unstable upon etching in an HCl solution and transform into planes. In contrast, facets undergo homogeneous chemical etching perpendicular to the initial crystallographic plane. The observed etching behavior has been explained in terms of surface oxy…

Kelvin probe force microscopeMaterials scienceMechanical EngineeringDangling bondBioengineeringGeneral ChemistryEpitaxyIsotropic etchingCrystallographyElectron diffractionMechanics of MaterialsEtching (microfabrication)General Materials ScienceElectrical and Electronic EngineeringThin filmWurtzite crystal structureNanotechnology
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