Search results for "thin film"
showing 10 items of 1200 documents
Theoretical investigation of the platinum substrate influence on BaTiO 3 thin film polarisation
2019
Density functional theory calculations are performed to study the out-of-plane polarisation in BaTiO3 (BTO) thin films epitaxially grown on platinum. Prior to any polarisation calculation, the stability of the Pt(001)/BaTiO3(001) structure is thoroughly discussed. In particular, the nature of the Pt/BTO and BTO/vacuum interfaces is characterised. The growth of BTO is shown to start with a TiO2 layer while the nature of the surface termination does not broadly modify the stability. Therefore both upper terminations are considered when describing the ferroelectric behaviour in Pt/BTO interfaces. The geometric and electronic effects of the substrate on the polarisation are investigated. To iso…
Electronic properties of *-oriented thin films
2007
Abstract To perform high precision measurements of the transport anisotropy, epitaxial, a *-oriented thin films of UPd 2 Al 3 have been prepared on LaAlO 3 (1 1 0) substrates. The critical temperature T c ≈ 1.75 K and the upper critical field B c 2 ≈ 3 T are comparable to typical bulk values. In contrast to UNi 2 Al 3 , we observed only a weak anisotropy in directional resistivity measurements, especially no dependence of the superconducting transition temperature on the direction of the applied current. Hall effect measurements show two characteristic minima at T = 16 K ≈ T N and T ≈ 6 K , which corresponds to features seen in earlier measurements on c *-oriented films.
Influence of Structure Ordering, Defects and External Conditions on Properties of Ferroelectric Perovskites
2000
Results of comprehensive studies of the (A’A“)(B’B”)O3-ferroelectric perovskites are reported. Examined compositions include Pb1-xLax(Zr0.65Ti0.35)1-x/4O3(PLZT), PbSc0.5Nb0.5O3(PSN), PbSc0.5Ta0.5O3(PST), and PMNT, PSNT and PLuNT pseudo-binary systems exhibiting pronounced dielectric, electrooptical, and electromechanical properties. Degree of ordering in the materials has been varied by chemical composition (modification, isomorphic ion substitution), by variation of technology (hot-pressing, specific thermal treatment, thin films), and by irradiation of different kind and intensity (γ-rays, electrons, neutrons).
Threshold photoemission magnetic circular dichroism at the spin-reorientation transition of ultrathin epitaxial Pt/Co/Pt(111)/W(110) films
2009
X-ray magnetic circular dichroism (MCD) is nowadays widely used for the investigation of magnetic properties of surfaces and thin films. Recently, similarly large effects have been observed for UV-VIS MCD effects both in single [1] and two-photon photoemission [2-3]. This threshold MCD effect is directly related to spin-orbit effects present at the Fermi edge. We report on the observation of threshold photoemission magnetic circular dichroism (TPMCD) in one-photon and two-photon photoemission (1PPE and 2PPE) at a Pt-capped ultrathin Co wedge grown on Pt(111)/W(110) using femtosecond laser light. TPMCD measurements result in asymmetries continuously increasing with the sample thickness. This…
Temperature dependence of magnetization reversal in Co and Fe3O4 nanowire arrays
2005
Abstract In this paper, we investigate the magnetization reversal of cobalt and magnetite nanowires, 4 nm in diameter, synthesized within the pores of mesoporous silica thin films. A SQUID magnetometer was used to study the magnetic properties of the nanowire arrays over a broad temperature interval, T= 1.8–300 K. The magnetization reversal process was found to be strongly temperature dependent. While a coherent rotation may occur at room temperature, a process involving the formation of domain structures takes place as the temperature decreases down to 1.8 K.
Electrical detection of the spin reorientation transition in antiferromagnetic TmFeO3 thin films by spin Hall magnetoresistance
2021
$\mathrm{Tm}\mathrm{Fe}{\mathrm{O}}_{3}$ (TFO) is a canted antiferromagnet that undergoes a spin reorientation transition (SRT) with temperature between 82 and 94 K in single crystals. In this temperature region, the N\'eel vector continuously rotates from the crystallographic $c$ axis (below 82 K) to the $a$ axis (above 94 K). The SRT allows for a temperature control of distinct antiferromagnetic states without the need for a magnetic field, making it apt for applications working at terahertz frequencies. For device applications, thin films of TFO are required as well as an electrical technique for read-out of the magnetic state. Here, we demonstrate that orthorhombic TFO thin films can be…
Antiferroelectric PbZrO3 thin films: structure, properties and irradiation effects
2004
Abstract Irradiation effects on highly oriented antiferroelectric PbZrO 3 and ferroelectric Pb 0.92 La 0.08 (Zr 0.65 Ti 0.35 )O 3 thin films are investigated being exposed to neutron irradiation up to fluence 2*10 22 m −2 . The higher resistance of antiferroelectric PbZrO 3 thin films as compared to ferroelectric heterostructures to large fluences of neutron irradiation is recognized and discussed. Influence of two factors (structural and charge) was taken into account analysing irradiation effects on materials of different polarization states: ferroelectric PLZT (ceramics and thin films) and antiferroelectric PbZrO 3 films.
Observation of quantized subband states and evidence for surface electron accumulation in CdO from angle-resolved photoemission spectroscopy
2008
The electronic structure of well-ordered single-crystal thin films of CdO100 has been studied using angleresolved photoemission spectroscopy. Quantized electron subbands are observed above the valence-band maximum. The existence of these states provides evidence of an intrinsic electron accumulation space-charge layer near the CdO surface, an interpretation supported by coupled Poisson-Schrodinger calculations. The origin of the accumulation layer result is discussed in terms of the bulk band structure of CdO calculated using quasiparticle-corrected density-functional theory, which reveals that the conduction-band minimum at the Brillouin-zone center lies below the charge neutrality level.
Ferroelectricity and structure of BaTiO grown on YBa Cu O thin films
2000
We have investigated the crystal structure and the ferroelectric properties of BaTiO3 thin films with YBa2Cu3O \(_{7 - \delta }\) as the bottom and Au as the top electrode. Epitaxial heterostructures of YBa2Cu3O \(_{7 - \delta }\) and BaTiO3 were prepared by dc and rf sputtering, respectively. The crystal structure of the films was characterised by X-ray diffraction. The ferroelectric behaviour of the BaTiO3 films was confirmed by hysteresis loop measurements using a Sawyer Tower circuit. We obtain a coercive field of 30 kV/cm and a remanent polarisation of 1.25 μC/cm2. At sub-switching fields the capacitance of the films obeys a relation analogous to the Rayleigh law. This behaviour indica…
Structural characterization and anomalous Hall effect of Rh2MnGe thin films
2015
Abstract We present the preparation, structural investigations, and transport properties of L21-ordered epitaxial Rh2MnGe Heusler thin films grown by pulsed laser deposition. The films grow (1 0 0) oriented on (1 0 0)MgO substrate with [ 0 1 1 ] Rh 2 MnGe ∥ [ 0 1 0 ] MgO . The rocking curve widths of (4 0 0) reflections are below 1° and decrease with increasing deposition temperature. The flat surface of the thin films allowed lithographic patterning enabling quantitative magnetotransport measurements. We measured resistivity and the Hall effect. We suggest skew scattering as the dominant effect in the temperature dependent anomalous Hall effect, consistent with the theoretically expected s…