Search results for "threshold"
showing 10 items of 688 documents
Energy structure of thin films of carbazole derivatives with metal electrodes
2011
Study of charge carrier transport in organic electroluminescent devices, organic photovoltaic devices, and organic field-effect transistors is one of the most important points. In order to realize comparable electron and hole transport in thin organic films with electrodes the energy structure of such devices are of great importance. In this work, we have studied electrical properties and energy structure of two carbazole derivatives. The threshold energy of photoconductivity quantum efficiency is 2.90 eV and optical energy gap is 3.3 eV in thin films is obtained. The values of work function of ITO, Au, Cu and Pd electrodes are energetically close to conductivity level of holes and holes in…
Distributed feedback lasing in cellulose films
2013
Cellulose derivatives, because of their molecular structure and chirality, can self-assemble to form spatially periodic cholesteric liquid crystal phases. We have synthesized and produced solid cross-linked cholesteric cellulose based films optimized to provide high reflectivity. Since these films are self-assembled photonic bandgap materials, they may be expected to show distributed feedback lasing. By doping samples with fluorescent dyes and optically pumping thin films of these materials, we were able to demonstrate, to the best of our knowledge, for the first time, mirrorless band-edge lasing in cellulose derivatives.
Nanocrystal memories for FLASH device applications
2004
Nanocrystals memory cells, in which the conventional polysilicon floating gate is replaced by an array of silicon nanocrystals, have been fabricated and characterized. Single cells and cell arrays of 1 Mb and 10 k have been realized by using a conventional 0.15 μm FLASH technology. Si nanocrystals are deposited on top of tunnel oxide by chemical vapor deposition. Properties of the memory cell have been investigated both for NAND and NOR applications in terms of program/erase window and programming times. Suitable program/erase threshold voltage window can be achieved with fast voltage pulses by adequate choice of tunnel and control dielectric. The feasibility of dual bit storage is also pro…
Very low instability threshold in a three-level laser model with incoherent optical pumping
1997
Abstract The stability properties of a laser model based on a closed three-level atomic scheme with incoherent optical pumping are studied. Unexpectedly, the instability threshold can be very low approaching the lasing threshold for large unsaturated gain values.
Continuous-wave spontaneous lasing in mercury pumped by resonant two-photon absorption
2010
The first continuous-wave two-photon absorption laser-induced stimulated emission (CTALISE) is demonstrated. The 7^1S-6^1P transition in mercury at 1014nm wavelength is used and selective lasing of different isotopes is observed.
Impact of contact resistance on the electrical properties of MoS2 transistors at practical operating temperatures
2017
Molybdenum disulphide (MoS2) is currently regarded as a promising material for the next generation of electronic and optoelectronic devices. However, several issues need to be addressed to fully exploit its potential for field effect transistor (FET) applications. In this context, the contact resistance, RC, associated with the Schottky barrier between source/drain metals and MoS2 currently represents one of the main limiting factors for suitable device performance. Furthermore, to gain a deeper understanding of MoS2 FETs under practical operating conditions, it is necessary to investigate the temperature dependence of the main electrical parameters, such as the field effect mobility (μ) an…
Depletion-induced percolation in networks of nanorods.
2006
Above a certain density threshold, suspensions of rod-like colloidal particles form system-spanning networks. Using Monte Carlo simulations, we investigate how the depletion forces caused by spherical particles affect these networks in isotropic suspensions of rods. Although the depletion forces are strongly anisotropic and favor alignment of the rods, the percolation threshold of the rods decreases significantly. The relative size of the effect increases with the aspect ratio of the rods. The structural changes induced in the suspension by the depletant are characterized in detail and the system is compared to an ideal fluid of freely interpenetrable rods.
How far will Silicon nanocrystals push the scaling limits of NVMs technologies?
2004
For the first time, memory devices with optimized high density (2E12#/cm/sup 2/) LPCVD Si nanocrystals have been reproducibly achieved and studied on an extensive statistical basis (from single cell up to 1 Mb test-array) under different programming conditions. An original experimental and theoretical analysis of the threshold voltage shift distribution shows that Si nanocrystals have serious potential to push the scaling of NOR and NAND flash at least to the 35 nm and 65 nm nodes, respectively.
A subthreshold, low-power, RHBD reference circuit, for earth observation and communication satellites
2015
A low-power, wide temperature range, radiation tolerant CMOS voltage reference is presented. The proposed reference circuit exhibits a voltage deviation of 0.8mV for 3-MeV protons total ionization dose of 2Mrad and a voltage deviation of 3.8mV for 10-keV X-rays total ionization dose of 4Mrad while being biased at the nominal supply voltage of 0.75V during X-ray irradiation. In addition, the circuit consumes only 4μW and exhibits a measured Temperature Drift of 15ppm/°C for a temperature range of 190°C (−60°C to 130°C) at the supply voltage of 0.75V. It utilizes only CMOS transistors, operating in the subthreshold regime, and poly-silicon resistors without using any diodes or external compon…
Combined K-Best sphere decoder based on the channel matrix condition number
2008
It is known that sphere decoding (SD) methods can provide maximum-likelihood (ML) detection over Gaussian MIMO channels with lower complexity than the exhaustive search. Channel matrix condition number represents an important influence on the performance of usual detectors. Throughout this paper, two particular cases of a SD method called K-Best carry out a combined detection in order to reduce the computational complexity with predictable performance degradation. Algorithm selection is based on channel matrix condition number thresholding. K-Best is a suboptimal SD algorithm for finding the ML solution of a detection problem. It is based on a fixed complexity tree search, set by a paramete…