Search results for "threshold"

showing 10 items of 688 documents

Efficacy and Safety of Subthreshold Micropulse Yellow Laser for Persistent Diabetic Macular Edema After Vitrectomy: A Pilot Study

2022

Aim: To examine the effect of subthreshold micropulse yellow laser (SMYL) on best-corrected visual acuity (BCVA), central macular thickness (CMT), and optical coherence tomography angiography (OCT-A) changes in eyes with persistent diabetic macular edema (DME) after pars plana vitrectomy (PPV) for tractional DME (TDME).Patients and Methods: In a comparative study, 95 eyes of 95 consecutive patients with persistent DME were prospectively enrolled. The SMYL group (54 eyes) was treated with SMYL 6 months after PPV, while the control group (41 eyes) was followed up without treatment. BCVA and CMT by OCT were analyzed at baseline and 3 and 6 months. Additionally, parameters such as the vessel de…

Pharmacologydiabetic retinopathySettore MED/30 - Malattie Apparato VisivoinflammationOCT angiographysubthreshold micropulse laserPharmacology (medical)OCT angiography; diabetic retinopathy; inflammation; subthreshold micropulse laser; tractional DMEtractional DME
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Current status of AlInN layers lattice-matched to GaN for photonics and electronics

2007

We report on the current properties of Al1-x InxN (x approximate to 0.18) layers lattice- matched ( LM) to GaN and their specific use to realize nearly strain- free structures for photonic and electronic applications. Following a literature survey of the general properties of AlInN layers, structural and optical properties of thin state- of- the- art AlInN layers LM to GaN are described showing that despite improved structural properties these layers are still characterized by a typical background donor concentration of ( 1 - 5) x 10(18) cm(-3) and a large Stokes shift (similar to 800 meV) between luminescence and absorption edge. The use of these AlInN layers LM to GaN is then exemplified …

PhotoluminescenceMaterials scienceAcoustics and UltrasonicsGallium nitrideSettore ING-INF/01 - ElettronicaVertical-cavity surface-emitting laserchemistry.chemical_compoundMOLECULAR-BEAM EPITAXYALGAN/GAN QUANTUM-WELLSIII-VDISTRIBUTED BRAGG REFLECTORSCRYSTALSURFACE-EMITTING LASERSbusiness.industryREFLECTORSHeterojunctionOPTICAL-PROPERTIESCondensed Matter PhysicsAL1-XINXN THIN-FILMSSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsDISTRIBUTED BRAGGAbsorption edgechemistryOptoelectronicsVAPOR-PHASE EPITAXYIII-V NITRIDESFIELD-EFFECT TRANSISTORSNITRIDESbusinessLiterature surveyCRYSTAL GALLIUM NITRIDELasing thresholdGALLIUM NITRIDEMolecular beam epitaxyJournal of Physics D: Applied Physics
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Blue lasing at room temperature in high quality factor GaN/AlInN microdisks with InGaN quantum wells

2007

The authors report on the achievement of optically pumped III-V nitride blue microdisk lasers operating at room temperature. Controlled wet chemical etching of an AlInN interlayer lattice matched to GaN allows forming inverted cone pedestals. Whispering gallery modes are observed in the photoluminescence spectra of InGaN/GaN quantum wells embedded in the GaN microdisks. Typical quality factors of several thousands are found (Q>4000). Laser action at similar to 420 nm is achieved under pulsed excitation at room temperature for a peak power density of 400 kW/cm(2). The lasing emission linewidth is down to 0.033 nm.

PhotoluminescenceMaterials sciencePhysics and Astronomy (miscellaneous)business.industryBOXESSettore ING-INF/01 - ElettronicaSemiconductor laser theoryGANOptical pumpingMICROCAVITIESLaser linewidthOpticsLASERSSemiconductors Laser physics Photoluminescence spectroscopy Oscillator strengths Quantum wells Optical absorption Whispering gallery wave Nitrides Etching Electrical properties and parametersOptoelectronicsStimulated emissionWhispering-gallery waveGAAS MICRODISKSbusinessLasing thresholdQuantum well
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Multi-line NIR-RGB emission in Nd:LiNbO3 RPE optical waveguides

2007

Simultaneous generation of four spectral emission lines has been achieved in Nd-doped lithium niobate reverse proton exchange optical waveguide cavities. Using a pump at 800 nm, the four lines were found and they are due to lasing at 1.3735 combined with parametric conversion at 0.687, 0.574 and 0.4 mum.

PhotoluminescenceMaterials scienceProtonbusiness.industryLithium niobatechemistry.chemical_elementNeodymiumion exchange lithium compounds neodymium optical pumping optical waveguides photoluminescenceSettore ING-INF/01 - ElettronicaOptical pumpingchemistry.chemical_compoundOpticschemistryRGB color modelElectrical and Electronic EngineeringbusinessLasing thresholdLine (formation)
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PINGU: a vision for neutrino and particle physics at the South Pole

2017

The Precision IceCube Next Generation Upgrade (PINGU) is a proposed low-energy in-fill extension to the IceCube Neutrino Observatory. With detection technology modeled closely on the successful IceCube example, PINGU will provide a 6Mton effective mass for neutrino detection with an energy threshold of a few GeV. With an unprecedented sample of over 60,000 atmospheric neutrinos per year in this energy range, PINGU will make highly competitive measurements of neutrino oscillation parameters in an energy range over an order of magnitude higher than long-baseline neutrino beam experiments. PINGU will measure the mixing parameters $\theta_{\rm 23}$ and $\Delta m^2_{\rm 32}$, including the octan…

Physics - Instrumentation and DetectorsPhysics::Instrumentation and Detectorsmixing [neutrino]atmospheric neutrinos; IceCube Neutrino Observatory; neutrino oscillations; PINGU; Nuclear and High Energy Physicspole7. Clean energy01 natural sciencesPINGUIceCube Neutrino ObservatoryIceCubeHigh Energy Physics - ExperimentObservatoryPhysicssolar [WIMP]precision measurementAstrophysics::Instrumentation and Methods for Astrophysicsoscillation [neutrino]solar [dark matter]atmosphere [neutrino]threshold [energy]mass difference [neutrino]atmospheric neutrinosobservatoryHigh Energy Physics - PhenomenologyUpgradeNeutrino detectorupgradeNeutrinoKM3NETperformanceParticle physicsNuclear and High Energy Physicssupernova [neutrino]particle identification [neutrino/tau]Astrophysics::High Energy Astrophysical PhenomenaSUPERNOVA DETECTIONIceCube Neutrino Observatory0103 physical sciencesOSCILLATIONSmass: low [dark matter]unitarityddc:530010306 general physicsNeutrino oscillationneutrino oscillations010308 nuclear & particles physicsAstronomysensitivityKM3NeTPhysics and Astronomymass [neutrino]beam [neutrino]High Energy Physics::ExperimentgalaxyATMOSPHERIC NEUTRINOSMATTERSYSTEMLeptonmixing angle [neutrino]experimental results
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Precision Measurement of the e+e−→Λc+Λ¯c− Cross Section Near Threshold

2018

The cross section of the e(+)e(-) -> Lambda(+)(c)(Lambda) over bar (-)(c) process is measured with unprecedented precision using data collected with the BESIII detector at root s = 4574.5, 4580.0, 4590.0 and 4599.5 MeV. The nonzero cross section near the Lambda(+)(c)(Lambda) over bar (-)(c) production threshold is cleared. At center-of-mass energies root s = 4574.5 and 4599.5 MeV, the higher statistics data enable us to measure the Lambda(c) polar angle distributions. From these, the.c electric over magnetic form-factor ratios (vertical bar G(E)/G(M)vertical bar) are measured for the first time. They are found to be 1.14 +/- 0.14 +/- 0.07 and 1.23 +/- 0.05 +/- 0.03, respectively, where the …

Physics010308 nuclear & particles physicsElectron–positron annihilationAnalytical chemistryGeneral Physics and AstronomyLambda01 natural sciencesNear thresholdCross section (physics)Angular distribution0103 physical sciencesHigh Energy Physics::ExperimentBorn approximation010306 general physicsClearanceBar (unit)Physical Review Letters
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The general expression for the transition amplitude of two-photon ionization of atomic hydrogen

2003

Two-photon ionization of atomic hydrogen with an excess photon is revisited. The non-relativistic dipole approximation and Coulomb Green function (CGF) formalism are applied. Using the CGF Sturmian expansion straightforwardly, one gets the radial transition amplitude in the form of an infinite sum over Gauss hypergeometric functions which are polynomials. It is convergent if all intermediate states are in the discrete spectrum. In the case of two-photon ionization with an excess photon, when photoionization is also possible, intermediate states are in the continuum. We performed the explicit summation over intermediate states and got a simple general expression for the radial transition amp…

PhysicsAbove threshold ionizationPhotoionizationCondensed Matter PhysicsAtomic and Molecular Physics and OpticsPositroniumAmplitudeExcited stateQuantum mechanicsIonizationPhysics::Atomic PhysicsHypergeometric functionAtomic physicsGround stateJournal of Physics B: Atomic, Molecular and Optical Physics
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Multi-longitudinal mode emission in a bidirectional laser model

2011

Multi-longitudinal mode emission is a fundamental issue in laser physics. Interestingly enough, the mechanisms responsible for the transition from single- to multi-longitudinal mode emission have not been completely clarified yet. For example, it is well known that in unidirectional ring lasers the Rabi splitting of the lasing transition can lead to multimode emission even in a homogeneously broadened medium, the so called Risken-Nummedal—Graham-Haken instability (RNGHI) [1]. In spite of being known since the late sixties, only in the recent years a couple of experiments have demonstrated “dressed” versions of the RNGHI [2], i.e., up to day there are not clear demonstrations of this basic m…

PhysicsActive laser mediumbusiness.industryLaser scienceLaser pumpingInjection seederLaserlaw.inventionOpticslawQuantum electrodynamicsSemiconductor optical gainbusinessLasing thresholdTunable laser
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Evidence for degenerate mirrorless lasing in alkali metal vapor: forward beam magneto-optical experiment

2018

We report an experimental observation of degenerate mirrorless lasing in forward direction under excitation of a dilute atomic Rb vapor with a single linearly polarized cw laser light resonant with cycling Fe > Fg atomic D2 transitions. Light polarized orthogonally to the laser light is generated for the input light intensity exceeding a threshold value of about 3 mW/cm^2. Application of a transverse magnetic field directed along the input light polarization reveals a sharp about 20 mG wide magnetic resonance centered at B = 0. Increasing the incident light intensity from 3 to 300 mW/cm^2, the generated light undergoes rapid amplitude increase followed by a decline and resonance broadeni…

PhysicsAtomic Physics (physics.atom-ph)Linear polarizationFOS: Physical sciencesResonanceCondensed Matter PhysicsPopulation inversionLaserPolarization (waves)01 natural sciencesRayAtomic and Molecular Physics and OpticsPhysics - Atomic Physicslaw.invention010309 opticsLight intensitylaw0103 physical sciencesAtomic physics010306 general physicsLasing thresholdJournal of Physics B: Atomic, Molecular and Optical Physics
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Measuring charge based quantum bits by a superconducting single-electron transistor

2002

Single-electron transistors have been proposed to be used as a read-out device for Cooper pair charge qubits. Here we show that a coupled superconducting transistor at a threshold voltage is much more effective in measuring the state of a qubit than a normal-metal transistor at the same voltage range. The effect of the superconducting gap is to completely block the current through the transistor when the qubit is in the logical state 1, compared to the mere diminishment of the current in the normal-metal case. The time evolution of the system is solved when the measuring device is driven out of equilibrium and the setting is analysed numerically for parameters accessible by lithographic alu…

PhysicsCharge qubitCondensed matter physicsPhysicsCondensed Matter - Superconductivitysingle-electron transistorMultiple-emitter transistorFOS: Physical sciencesHardware_PERFORMANCEANDRELIABILITYsuperconductorsCondensed Matter::Mesoscopic Systems and Quantum Hall EffectThreshold voltagePhase qubitSuperconductivity (cond-mat.supr-con)superconductorsingle-electron transistorsComputer Science::Emerging TechnologiesHardware_GENERALOptical transistorHardware_INTEGRATEDCIRCUITScharge-based quantum bitsField-effect transistorSuperconducting quantum computingStatic induction transistorHardware_LOGICDESIGN
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