Search results for "tunne"

Exchange bias in epitaxial Mn2Au (0 0 1)/Fe (0 0 1) bilayers

2019

Current rectification in a single molecule diode: the role of electrode coupling.

2015

We demonstrate large rectification ratios (> 100) in single-molecule junctions based on a metal-oxide cluster (polyoxometalate), using a scanning tunneling microscope (STM) both at ambient conditions and at low temperature. These rectification ratios are the largest ever observed in a single-molecule junction, and in addition these junctions sustain current densities larger than 10^5 A/cm^2. By following the variation of the I-V characteristics with tip-molecule separation we demonstrate unambiguously that rectification is due to asymmetric coupling to the electrodes of a molecule with an asymmetric level structure. This mechanism can be implemented in other type of molecular junctions u…

Spin-polarized scanning tunneling microscopy and spectroscopy of ultrathinFe∕Mo(110)films usingW∕Au∕Cotips

2006

We report on magnetic contrast observed in low-temperature spin-polarized scanning tunneling microscopy (SP-STM) of Fe nanowires deposited on Mo(110) using tungsten tips covered by $\mathrm{Au}∕\mathrm{Co}$ thin films. Due to the spin reorientation transition of Co films on Au an out-of-plane magnetic sensitivity is obtained for tips with thin cobalt films (up to 8 monolayers of Co), while for thicker Co coverages an in-plane magnetization component can be probed. Using $\mathrm{W}∕\mathrm{Au}∕\mathrm{Co}$ tips with out-of-plane magnetic sensitivity we show that the one (ML) and two (DL) atomic layers thick Fe nanowires prepared using step flow growth on a Mo(110) crystal are perpendicularl…

Spin-Polarized Scanning Tunnelling Microscopy of Ultrathin Films

2006

Using low temperature spin-polarized scanning tunneling microscopy we have studied the morphology and magnetic properties of ultrathin Fe(0.5 ML)Au(0.5 ML) nanowires prepared on a Mo(110) single crystal. The Fe nanostripes grown by step flow on a Mo(110) at 700 K were covered by Au at RT, and subsequently annealed at 700 K. Differences in the morphology of Au on Fe(110)/Mo(110) and clean Mo(110) surfaces are observed and discussed. After annealing, the Mo is covered by a homogeneous FeAu ML alloy with several iron enriched islands which reveal an out-of-plane magnetic contrast. Direct lateral exchange coupling has been observed for these islands.

Stability, sub-gap current, 1/f-noise, and elemental depth profiling of annealed Al:Mn-AlOX-Al normal metal-insulator-superconducting tunnel junctions

2016

In this paper we report a study of the effect of vacuum annealing at 400◦C on the properties of normal metal-insulator-superconductor (NIS) tunnel junctions, with manganese doped aluminium (Al:Mn) as the normal metal, aluminum as the superconductor and amorphous aluminum oxide as the tunneling barrier (Al:Mn-AlOx-Al). The annealing treatment improves the stability of the junctions, increases their tunneling resistance and does not have a negative impact on the low-temperature current-voltage characteristics. The measured 1 / f resistance noise of the junctions also changes after annealing, in the best case decreasing by over an order of magnitude. All these observations show that annealing …

Thermally Stimulated Ionic and Electronic Processes and Radiation-Induced Defect Annealing in LiBaF3 Crystals

2000

The electronic, ionic and ion-diffusion controlled thermally stimulated relaxation (TSR) processes in X-ray irradiated (at 80 K or 290 K) nominally pure LiBaF3 fluoroperovskite crystals have been investigated in the 90–550 K range by means of the ionic conductivity, ionic thermally stimulated depolarization current (TSDC), as well as the thermally stimulated current (TSC), thermally stimulated luminescence (TSL) and the X-ray induced optical absorption spectra thermal bleaching techniques. The role of the thermoactivated ionic and ionic-electronic processes in the TSR (thermal bleaching, TSC and TSL) of X-ray irradiated crystals is studied above 250 K. The TSL efficiency (ratio TSL/TSC) ver…

Charge transport mechanism in networks of armchair graphene nanoribbons

2020

In graphene nanoribbons (GNRs), the lateral confinement of charge carriers opens a band gap, the key feature to enable novel graphene-based electronics. Successful synthesis of GNRs has triggered efforts to realize field-effect transistors (FETs) based on single ribbons. Despite great progress, reliable and reproducible fabrication of single-ribbon FETs is still a challenge that impedes applications and the understanding of the charge transport. Here, we present reproducible fabrication of armchair GNR-FETs based on a network of nanoribbons and analyze the charge transport mechanism using nine-atom wide and, in particular, five-atom-wide GNRs with unprecedented conductivity. We show formati…

Two-terminal nanoelectromechanical devices based on germanium nanowires.

2009

A two-terminal bistable device, having both ON and OFF regimes, has been demonstrated with Ge nanowires using an in situ TEM-STM technique. The function of the device is based on delicately balancing electrostatic, elastic, and adhesion forces between the nanowires and the contacts, which can be controlled by the applied voltage. The operation and failure conditions of the bistable device were investigated, i.e. the influence of nanowire diameter, the surface oxide layer on the nanowires and the current density. During ON/OFF cycles the Ge nanowires were observed to be more stable than carbon nanotubes, working at similar conditions, due to the higher mechanical stability of the nanowires. …

Reduction of low-frequency 1/f noise in Al-AlOx-Al tunnel junctions by thermal annealing

2010

We report that annealing Al-AlOx-Al tunnel junctions in a vacuum chamber at temperature of 400C reduces the characteristic 1/f noise in the junctions, in some cases by an order of magnitude. Both ultra high vacuum and high vacuum fabricated samples demonstrated a significant reduction in the 1/f noise level. Temperature dependence of the noise was studied between 4.2 and 340 Kelvin, with a linear dependence below 100 K, but a faster increase above. The results are consistent with a model where the density of charge trapping two level-systems within the tunneling barrier is reduced by the annealing process.

Large Dzyaloshinskii-Moriya interaction and room-temperature nanoscale skyrmions in CoFeB/MgO heterostructures

2021

Summary Magnetic skyrmions in heavy metal (HM)/CoFeB/MgO structures are of particular interest for skyrmion-based magnetic tunnel junction (MTJ) devices because of their reliable generation, stability, and readout through purely electrical methods. To optimize the properties, such as stability, a strong Dzyaloshinskii-Moriya interaction (DMI) is required at room temperature. Here, using first-principles calculations, we demonstrate that huge DMI can be obtained in Ir/CoFe structures with an Fe-terminated configuration. Moreover, Brillouin light-scattering measurements show that indeed Ta/Ir/Co20Fe60B20/MgO thin films with perpendicular magnetic anisotropy exhibit a large DMI value (1.13 mJ/…