Search results for "tunnel magnetoresistance"
showing 5 items of 25 documents
Introduction to Self-Assembled Monolayers
2015
One of the most exciting targets of molecular spintronics field is to go towards multifunctional devices where the properties can be accurately controlled and actively changed. Spin dependent hybridization at the metal/molecule interface could thus be used in the tailoring of the resistive and magnetoresistive response of spintronic devices exploiting chemistry versatility. In this new direction, Self-Assembled Monolayers (SAMs) appear as highly promising candidates since each part and function of this system can be modulated independently (like a molecular LEGO building unit). Despite highly promising, they are still scarcely investigated in the literature probably due to the difficulties …
Total ionizing dose (TID) evaluation of magnetic tunnel junction (MTJ) current sensors
2015
Abstract The paper shows an experimental study to know the behaviour of tunnel magnetoresistive effect-based current sensors configured in a Wheatstone bridge in response to irradiation. In particular the sensitivity, hysteresis, output offset voltage and input resistance are discussed when the sensors are submitted to a total irradiation dose of 43 krad with 36 krad/h dose rate. The same electrical parameters were studied subsequently once the irradiated sensors were submitted to an 80 °C annealing process. The studied TMR sensors are applied in a switched-mode power converter for space application.
Electrical Characterization of a Magnetic Tunnel Junction Current Sensor for Industrial Applications
2012
The objective of the work was the design of a Wheatstone bridge current sensor using MTJ as magnetoresistive elements. Each one of the four resistances of the bridge consists on 360 MTJ single elements connected in series for improved electrical robustness. A printed circuit board (PCB) was designed with a U-shaped copper trace placed under the PCB maintaining a 1.1 mm separation distance between sensor and trace. A 160% of tunnel magnetoresistance effect in the single junction and a 120% in its corresponding series elements connection has been achieved with a sensitivity of 9.2 Ω/Oe in a 65 Oe linear range. The DC sensor sensitivity in response to an external DC current sweeps of ±10, ±20,…
Magneto-Transport Results in SAM Based MTJs
2015
This chapter is dedicated to the description of the magneto-transport results obtained in LSMO/SAM/Co magnetic tunnel nanojunctions fabricated by nanoindentation lithography technique. We started by focusing on the study of LSMO/C12P/Co MTJs. This because C12P is a medium size alkyl chain: long enough to avoid short-circuits in the junction but short enough to give a device resistance in the order of few tens of MO and thus easier to measure. Next, we started to tune the molecule thickness from C10P to C18P (from 10 carbon atoms in the alkyl chain to 18). This allowed on one hand to validate our system by comparing the exponential increase of the junction resistance to the one reported in t…
Electronic Energy Meter Based on a Tunnel Magnetoresistive Effect (TMR) Current Sensor
2017
In the present work, the design and microfabrication of a tunneling magnetoresistance (TMR) electrical current sensor is presented. After its physical and electrical characterization, a wattmeter is developed to determine the active power delivered to a load from the AC 50/60 Hz mains line. Experimental results are shown up to 1000 W of power load. A relative uncertainty of less than 1.5% with resistive load and less than 1% with capacitive load was obtained. The described application is an example of how TMR sensing technology can play a relevant role in the management and control of electrical energy.