Search results for "vat"
showing 10 items of 24801 documents
How activator ion concentration affects spectroscopic properties on Ba4Y3F17: Er3+, Yb3+, a new perspective up-conversion material
2018
Abstract Ba4Y3F17 with Er3+ and Yb3+, a promising material for up-conversion luminescence, was synthesized. Excellent isomorphic capacity was detected. Low-temperature measurements show that erbium ions are incorporated in multiple lattice positions, which is inconsistent with the current model of Ba4Y3F17 crystal lattice structure. Activator ion concentration has a different impact on 4S3/2 and 4F9/2, states (for the green and red luminescence, respectively) depopulation. Energy transfer from Er3+ 4S3/2 state to Yb3+ is observed even at low temperature (15 K) while Er-Er cross-relaxation is observed from 120 K and above. Yb3+ concentration has a great impact to red-to-green up-conversion l…
Improve the dielectric properties of PrSrNi0.8Mn0.2O4 compounds by longer mechanical milling
2018
Abstract Structural and dielectric properties of PrSrNi 0.8 Mn 0.2 O 4 ceramics elaborated by a rapid method combining mechanical milling and heat treatment were studied for the first time. The raw materials are milled at different times ( t mil = 0, 5, 10, 20 and 30 h) and annealed at 1300 °C for 8 h to produce a revealed PrSrNi 0.8 Mn 0.2 O 4 single phase, exhibiting tetragonal structure with space group I 4/ mmm . This result was confirmed by using the TEM/ED pattern for sample milled at 30 h using the [001] orientation. The corresponding lattice images show a well-ordered compound, indicating the absence of stacking faults and the growth of the crystallites. Giant dielectric response …
Comparing the luminescence processes of YVO4:Eu and core-shell YVO4@YF3 nanocrystals with bulk-YVO4:Eu
2017
Abstract Comparative analysis of bulk, non-coated and core-shelled nanocrystalline YVO4:Eu was performed by means of time-resolved luminescence and VUV excitation luminescence spectroscopy techniques. Nanocrystalline YVO4:Eu samples – both as-prepared and YF3 core-shelled – have been synthesized by means of a microwave-assisted synthesis in ionic liquids, which allows to obtain 10–12 nm nanoparticles with high crystallinity. The results show noticeable differences between bulk and nanocrystalline YVO4:Eu in photoluminescence experimental data, which explains by influence of the nanocrystal surface. A YF3 core-shell layer around YVO4:Eu nanoparticles partially recovers the intensity of the E…
HCl gas gettering of low-cost silicon
2013
HCl gas gettering is a cheap and simple technique to reduce transition metal concentrations in silicon. It is attractive especially for low-cost silicon materials like upgraded metallurgical grade (UMG) silicon, which usually contain 3d transition metals in high concentrations. Etching of silicon by HCl gas occurs during HCl gas gettering above a certain onset temperature. The etching rate as well as the gettering efficiency was experimentally determined as a function of the gettering temperature, using UMG silicon wafers. The activation energy of the etching reaction by HCl gas was calculated from the obtained data. The gettering efficiency was determined by analyzing Ni as a representativ…
Annealing behaviour of aluminium-implanted InP
2000
The annealing behaviour of aluminium has been studied in single-crystal InP implanted with 40 and 120 keV 27Al+ ions. The implantation doses were 1 x 1015 and 1 x 1016 cm-2. The aluminium concentration profiles were determined by two techniques, Secondary ion mass spectrometry (SIMS) and the nuclear resonance broadening technique (NRB) which was used for checking purposes. The usability of the SIMS technique for profiling Al rich layers was studied. Significant inconsistencies were observed in the SIMS profiles with the high dose implanted samples. The 120 keV, 1 x 1016 cm-2 implanted samples were subject to annealing in argon atmosphere in the temperature range 380–600°C. Redistribution an…
Shallow and deep trap levels in X-ray irradiated β-Ga2O3: Mg
2019
Abstract The results of the investigation of thermostimulated luminescence (TSL) and photoconductivity (PC) of the X-ray irradiated undoped and Mg2+ doped β-Ga2O3 single crystals are presented. Three low-temperature peaks at 116 K, 147 K and 165 K are observed on the TSL glow curves of undoped crystals. The high-temperature TSL peaks at 354 K and 385 K are dominant in Mg2+ doped crystals. The correlation between doping with Mg2+ ions and the local energy levels of the intrinsic structural defects of β-Ga2O3, which are responsible for the TSL peaks and PC, is established. The nature of TSL peaks and the appropriate photoconductivity excitation bands are discussed.
Controlled Cytotoxicity of Plasma Treated Water Formulated By Open-air Hybrid Mode Discharge
2017
Plasma‐activated liquids (PAL) attract increasing interest with demonstrated biological effects. Plasma exposure in air produces stable aqueous reactive species which can serve as chemical diagnostics of PAL systems. Here, we tailor aqueous reactive species inside plasma‐activated water (PAW) through treating water with AC air spark and glow discharges in contact with water. Chemical probing demonstrated species specificity between two types of PAW. Spark discharge PAW contains urn:x-wiley:14381656:media:ppap201600207:ppap201600207-math-0006 and urn:x-wiley:14381656:media:ppap201600207:ppap201600207-math-0007, while urn:x-wiley:14381656:media:ppap201600207:ppap201600207-math-0008and urn:x-w…
Aqueous Corrosion of the GeSe4 Chalcogenide Glass: Surface Properties and Corrosion Mechanism
2009
International audience; The aqueous corrosion behavior of the GeSe4 glass composition has been studied over time under various conditions (temperature and pH). The evolution of the surface topography by atomic force microscopy and properties such as surface hardness and reduced modulus, as well as the optical transmission in the 1-16 μm window, have been measured as a function of time spent in the corrosive solution. It was found that even if the glass reacts at room temperature, its optical transparency was barely affected. Nevertheless, the durability of GeSe4 was found to be drastically affected by an increase of both temperature and pH. Furthermore, pure selenium nanoparticles were form…
Determination of impurity distributions in ingots of solar grade silicon by neutron activation analysis
2017
AbstractIn a series of crystallization experiments, the directional solidification of silicon was investigated as a low cost path for the production of silicon wafers for solar cells. Instrumental neutron activation analysis was employed to measure the influence of different crystallization parameters on the distribution of 3d-metal impurities of the produced ingots. A theoretical model describing the involved diffusion and segregation processes during the solidification and cooling of the ingots could be verified by the experimental results. By successive etching of the samples after the irradiation, it could be shown that a layer of at least 60 μm of the samples has to be removed to get r…
Structural, electronic and energetic effects in heterocyclic fluorene derivatives fused with a fulvene unit
2019
Abstract A set of 36 heterocyclic (B, N and O) fluorene (C) derivatives fused in nine ways with fulvene ring have been analyzed by means of different local aromaticity criteria. Molecular geometry of analyzed compounds were optimized at B3LYP/6-311++G(2d,2p) level of theory. The evaluation of the local aromaticity has been carried out through the use of the geometry-based harmonic oscillator model of aromaticity (HOMA) and the magnetism-based zz‐component of the nucleus independent chemical shifts calculated 1 A above the ring center (NICS1zz) indices as well as one aromaticity index derived from the Quantum Theory Atoms in Molecules (QTAIM), i.e. the para-delocalization index (PDI). Additi…