Search results for "wires"
showing 10 items of 174 documents
Staggered magnetic nanowire devices for effective domain-wall pinning in racetrack memory
2019
Domain-wall memory devices, in which the information is stored in nanowires, are expected to replace hard disk drives. A problem that remains to be solved in domain-wall memory is to pin the domain walls in a controllable manner at the nanometer scale using simple fabrication. We demonstrate the possibility to stabilize domain walls by making staggered nanowires. Controllable domain-wall movement is exhibited in permalloy nanowires using magnetic fields where the pinning field is about 10 mT. The pinning field and stability of the domain walls can be increased by adjusting the offset dimensions of the staggered nanowires. Domain-wall velocities of about 200 m/s are computed for the experime…
Electrical control of the nonlinear properties of plasmonic nanostructures
2020
This work brings nano-electronics and nano-photonics technologies together to create an electron- plasmon device whose linear and nonlinear optical properties are electrically controlled. Here, we present the first demonstration of nonlinear photoluminescence modulation by electrical means in an uncluttered configuration. To this purpose, plasmonic nanoantennas are interfaced with elec- trical connections inducing localized regions of electron accumulation and depletion and therefore affecting the optical response. Additionally, a complete analysis of the nonlinear photoluminescence in plasmonic nanowires is carried out. The delocalization and transport of nonlinearities provided by such st…
Optical transitions and excitonic recombination in InAs/InP self-assembled quantum wires
2001
InAs self-assembled quantum wire structures have been grown on InP substrates and studied by means of photoluminescence and polarized-light absorption measurements. According to our calculations, the observed optical transitions in each sample are consistent with wires of different heights, namely from 6 to 13 monolayers. The nonradiative mechanism limiting the emission intensity at room temperature is related to thermal escape of carriers out of the wires.
Plasmonic photoluminescence enhancement by silver nanowires
2015
Strong enhancement of photoluminescence is demonstrated for CdS nanocrystals and ruthenium-based dye (N719) due to localized surface plasmon resonance of silver nanowires placed on silver film. Alternative reasons for photoluminescence modulation such as mirror effect and uneven coating by dye or nanocrystals due to geometrical factors are discussed. An artifact such as carbon contamination at the surface of silver nanowires at high laser power is demonstrated and taken into consideration. Silver nanowire on silver film is proved to be an effective system for photoluminescence enhancement by localized surface plasmon resonance.
Optical properties of ZnO deposited by atomic layer deposition (ALD) on Si nanowires
2018
International audience; In this work, we report proof-of-concept results on the synthesis of Si core/ ZnO shell nanowires (SiNWs/ZnO) by combining nanosphere lithography (NSL), metal assisted chemical etching (MACE) and atomic layer deposition (ALD). The structural properties of the SiNWs/ZnO nanostructures prepared were investigated by X-ray diffraction, Raman spectroscopy, scanning and transmission electron microscopies. The X-ray diffraction analysis revealed that all samples have a hexagonal wurtzite structure. The grain sizes are found to be in the range of 7-14 nm. The optical properties of the samples were investigated using reflectance and photoluminescence spectroscopy. The study o…
Photoluminescence transient study of surface defects in ZnO nanorods grown by chemical bath deposition
2015
Two deep level defects (2.25 and 2.03 eV) associated with oxygen vacancies (Vo) were identified in ZnO nanorods (NRs) grown by low cost chemical bath deposition. A transient behaviour in the photoluminescence (PL) intensity of the two Vo states was found to be sensitive to the ambient environment and to NR post-growth treatment. The largest transient was found in samples dried on a hot plate with a PL intensity decay time, in air only, of 23 and 80 s for the 2.25 and 2.03 eV peaks, respectively. Resistance measurements under UV exposure exhibited a transient behaviour in full agreement with the PL transient, indicating a clear role of atmospheric O-2 on the surface defect states. A model fo…
Scanning optical microscopy modeling in nanoplasmonics
2012
International audience; One of the main purposes of nanoplasmonics is the miniaturization of optical and electro-optical components that could be integrable in coplanar geometry. In this context, we propose a numerical model of a polarized scanning optical microscope able to faithfully reproduce both photon luminescence and temperature distribution images associated with complex plasmonic structures. The images are computed, pixel by pixel, through a complete self-consistent scheme based on the Green dyadic functions (GDF) formalism. The basic principle consists in the numerical implementation of a realistic three-dimensional light beam acting as a virtual light tip able to probe the volume…
Current-driven periodic domain wall creation in ferromagnetic nanowires
2016
We predict the electrical generation and injection of domain walls into a ferromagnetic nano-wire without the need of an assisting magnetic field. Our analytical and numerical results show that above a critical current $j_{c}$ domain walls are injected into the nano-wire with a period $T \sim (j-j_{c})^{-1/2}$. Importantly, domain walls can be produced periodically even in a simple exchange ferromagnet with uniaxial anisotropy, without requiring any standard "twisting" interaction like Dzyaloshinskii-Moriya or dipole-dipole interactions. We show analytically that this process and the period exponents are universal and do not depend on the peculiarities of the microscopic Hamiltonian. Finall…
Analysis of the finite difference time domain technique to solve the Schrödinger equation for quantum devices
2004
An extension of the finite difference time domain is applied to solve the Schrödinger equation. A systematic analysis of stability and convergence of this technique is carried out in this article. The numerical scheme used to solve the Schrödinger equation differs from the scheme found in electromagnetics. Also, the unit cell employed to model quantum devices is different from the Yee cell used by the electrical engineering community. A bound for the time step is derived to ensure stability. Several numerical experiments in quantum structures demonstrate the accuracy of a second order, comparable to the analysis of electromagnetic devices with the Yee cell. a!Electronic mail: Antonio.Sorian…
Exciton Gas Compression and Metallic Condensation in a Single Semiconductor Quantum Wire
2008
4 páginas, 5 figuras.-- PACS numbers: 78.67.Lt, 71.30.+h, 71.35. -y.-- Comunicación presentada a la International Conference on the Physics of Semiconductors (ICPS) celebrada en Rio de Jqaneiro (Brasil/2008).