0000000000022086
AUTHOR
Zhonglin Jiang
showing 4 related works from this author
Evaluation of metastable pitting on titanium by charge integration of current transients
2010
Abstract The metastable pitting of titanium has been studied under potentiostatic control in solutions containing chloride ions. An approach based on the charge integration of current transients was proposed for a quantitative determination of metastable pitting. A pit density (dmpit) was defined as the number of metastable pits per unit area per unit time (cm−2 h−1) with a typical size, instead of a size distribution. The calculated dmpit of titanium at 0.5 VSCE in 0.6 M NaCl was about 1.0 × 103 cm−2 h−1 with a typical radius of 0.12 μm. An exponential potential dependence of dmpit was obtained through the integration approach.
Investigation of pitting resistance of titanium based on a modified point defect model
2011
Abstract The pitting resistance of titanium was studied under potential control in solutions containing chloride ions. The results evidenced that Cl − concentration had an effect on the metastable pitting intensity, but no significant influence on the uniform corrosion. XPS characterization revealed that some Cl − ions were present in the outer hydroxide layer, but few in the inner oxide layer, indicating that the inner oxide layer was impervious to Cl − ions. A cation–anion-vacancy condensation mechanism was considered for pit initiation based on the point defect model (PDM). The experimental results analyzed by the charge integration technique were in agreement with the derived relations.
Effect of silicon on corrosion resistance of Ti–Si alloys
2011
Abstract The corrosion resistance of Ti–Si alloys has been studied in acid solutions and the alloys exhibit a high resistance to corrosion. SEM examinations combined with EDAX allowed to conclude that the passive films on Ti–Si alloys are mainly composed of TiO 2 /SiO 2 oxides. XPS analysis indicated the formation of Si–O and Si–O–Ti bonds in the passive film, respectively corresponding to SiO 2 and Si-doping TiO 2 . The effect of silicon on the corrosion was correlated to the formation of a stable SiO 2 film, Si-doping on TiO 2 and the extended lattice imperfections formed along TiO 2 /SiO 2 grain boundaries and phase-boundaries. The calculated donor densities based on the point defect mod…
Investigation on passivity of titanium under steady-state conditions in acidic solutions
2011
Abstract The passivity of titanium was studied using potentiostatic polarization combined with Mott–Schottky analysis in acidic solutions. The oxide layer was characterized as an n-type semiconducting, oxygen deficient oxide (TiO1.993–1.996) with a donor density in the range of 1019–1020 cm−3 depending on electrode potential and electrolyte pH. The calculated thickness for the inner oxide layer was in the range of 1–4 nm, increasing linearly with applied potential and exponentially with electrolyte pH. The potential- and pH-dependence of the inner oxide thickness was interpreted by a modified point defect model for the migration-controlled oxide growth, in which the rate-determining step in…