0000000000024454
AUTHOR
J.a. Van Kan
Adhesion of proton beam written high aspect ratio hydrogen silsesquioxane (HSQ) nanostructures on different metallic substrates
Abstract Hydrogen silsesquioxane (HSQ) behaves as a negative resist under MeV proton beam exposure. HSQ is a high-resolution resist suitable for production of tall (
Development of elastomeric lab-on-a-chip devices through Proton Beam Writing (PBW) based fabrication strategies
Abstract In recent years, one of the most exciting developments in fluidic device applications is the rapid evolution of miniaturized micro- and nanofluidic systems, the so called “lab-on-a-chip” devices. These devices integrate laboratory functions into a single chip, and are capable of various biochemical analysis and synthesis, such as sample injection and preparation, single cell/molecule observation, bioparticle sequencing and sorting etc. The evolvement of lab-on-a-chip concept implies the use of novel fabrication techniques for the construction of versatile analytical components in a fast and reproducible manner. Endowed with unique three-dimensional fabrication abilities, Proton Bea…
Nano-imaging of single cells using STIM
Scanning transmission ion microscopy (STIM) is a technique which utilizes the energy loss of high energy (MeV) ions passing through a sample to provide structural images. In this paper, we have successfully demonstrated STIM imaging of single cells at the nano-level using the high resolution capability of the proton beam writing facility at the Centre for Ion Beam Applications, National University of Singapore. MCF-7 breast cancer cells (American Type Culture Collection [ATCC]) were seeded on to silicon nitride windows, backed by a Hamamatsu pin diode acting as a particle detector. A reasonable contrast was obtained using 1 MeV protons and excellent contrast obtained using 1 MeV alpha parti…
Proton beam written hydrogen silsesquioxane (HSQ) nanostructures for Nickel electroplating
Abstract Hydrogen silsesquioxane (HSQ) behaves as a negative resist under MeV proton beam exposure. HSQ is a high-resolution resist suitable for production of tall ( 1.5 μ m ) high-aspect-ratio nanostructures with dimensions down to 22 nm. High-aspect-ratio HSQ structures are required in many applications, e.g. nanofluidics, biomedical research, etc. Since P-beam writing is a direct and hence slow process, it is beneficiary to fabricate a reverse image of the patterns in a metallic stamp, e.g. by Ni electroplating. The Ni stamp can then be used to produce multiple copies of the same pattern. In this study we investigate the possibility to produce Ni stamps from p-beam written HSQ samples. H…