LiF crystals irradiated with 150MeV Kr ions: Peculiarities of color center creation and thermal annealing

Abstract Color centers in LiF crystals are studied under irradiation at room temperature with 150 MeV Kr ions in the fluence (Φ) range of 1010–1014 ions/cm2 with a beam current density of 10, 50, and 100 nA/cm2, corresponding to flux of 4.46 × 109, 2.23 × 1010 and 4.46 × 1010 ions/(cm2 × s), respectively. At Φ ⩾ 3 × 1012 ions/cm2 besides F and Fn centers also charged F 3 + centers are created. Thermal annealing of irradiated LiF crystals with Φ ⩾ 1013 ions/cm2 at 400 K leads to a decrease of F centers (due to annihilation with H centers) and an enhancement of complex Fn color centers (neutral and charged) due to interaction with thermally activated anion vacancies. Annealing LiF crystals at…

Accumulation of radiation defects and modification of micromechanical properties under MgO crystal irradiation with swift 132Xe ions

This work has been carried out within the framework of the EUROfusion Consortium and has received funding from the Euratom research and training programme 2014-2018 and 2019-2020 under grant agreement No. 633053. The views and opinions expressed herein do not necessarily reflect those of the European Commission. A.A. also acknowledges support via the project GF AP05134257 of Ministry of Education and Science of the Republic of Kazakhstan .

Thermal annealing of radiation damage produced by swift 132Xe ions in MgO single crystals

Abstract The annealing kinetics of the electron-type F+ and F color centers in highly pure MgO single crystals irradiated by 0.23-GeV 132Xe ions with fluences covering three orders of magnitude (Φ = 5 × 1011 –3.3 × 1014 ions/cm2) are studied experimentally via dependence of the optical absorption on preheating temperature. The annealing data are analyzed in terms of the diffusion-controlled bimolecular reactions between F-type centers and complementary interstitial oxygen ions. The behavior of the main kinetic parameters – the migration energies and pre-exponential factors – for different irradiation fluences is discussed and compared with that for other wide-gap binary materials from previ…

About complexity of the 2.16-eV absorption band in MgO crystals irradiated with swift Xe ions

Abstract The precise study of the accumulation and subsequent thermal annealing of the defects responsible for the complex absorption band around 2.16 eV, being under discussion in the literature for a long time, has been performed in highly pure MgO single crystals exposed to 0.23-GeV 132Xe ions with a fluence of Φ = 5 × 1011 − 3.3 × 1014 ions/cm2. Three Gaussian components with the maxima at 2.16, 2.02 and 2.40 eV have been considered as a measure of so-called D1, D2 and D3 defects. Similar to the F and F+ centers, the concentration of these defects increases at high fluences without saturation marks, thus confirming their radiation-induced nature (involvement of novel Frenkel defects). T…

Color centers and nanodefects in LiF crystals irradiated with 150MeV Kr ions

Abstract The modifications of structure, optical and nano-mechanical properties of LiF crystals after irradiation with 150-MeV Kr +14 ions at a fluence of 6 × 10 12  ions cm −2 have been studied using optical absorption spectroscopy, scanning electron and atomic force microscopy, and nanoindentation. Optical spectroscopy shows the saturation of F centers and a comparatively high number of F n centers. AFM and SEM imaging reveals a nanostructured region with columnar nanocrystallites (size 30–90 nm). Nanostructuring occurs in depths up to 10 μm, where the ion energy loss surpasses a critical threshold of about 10 keV/nm. At a lower energy loss a zone enriched with dislocations is observed. S…

Vacancy Defects in Ga2O3: First-Principles Calculations of Electronic Structure

This research was funded by the Science Committee of the Ministry of Education and Science of the Republic of Kazakhstan (Grant No. AP08856540) as well as by the Latvian research council via the Latvian National Research Program under the topic ?High-Energy Physics and Accelerator Technologies?, Agreement No: VPP-IZM-CERN-2020/1-0002 for A.I. Popov. In addition, J. Purans is grateful to the ERAF project 1.1.1.1/20/A/057 while A. Platonenko was supported by Latvian Research Council No. LZP-2018/1-0214. The authors thank A. Lushchik and M. Lushchik for many useful discussions. The research was (partly) performed in the Institute of Solid State Physics, University of Latvia ISSP UL. ISSP UL as…

Transition levels of acceptor impurities in ZnO crystals by DFT-LCAO calculations

This research was partly supported by the Kazakhstan Science Project № AP05134367«Synthesis of nanocrystals in track templates of SiO2/Si for sensory, nano-and optoelectronic applications» and Latvian Super Cluster (LASC), installed in the Institute of Solid State Physics (ISSP) of the University of Latvia. Authors are indebted to D. Gryaznov, A. Popov and A. Dauletbekova for stimulating discussions.

Color centers and structural damage in LiF induced by 150 MeV Kr ions

Color centers and evolution of structure defects were investigated in LiF crystals irradiated at room temperature with 150 MeV 84Kr ions with a beam current of 10nA/cm2 in the fluence range 1011 - 1014 ions/cm2 at the cyclotron accelerator DC-60 (Astana, Kazakhstan). At the fluence of 1011 ions/cm2, SEM imaging revealed mainly formation of etchable ion tracks. Above this fluence, severe structural modifications in the irradiated layer were observed which include the ion-induced formation of dislocations and grains with nano-scale dimensions. The role of fluence in the concentration of electronic color centers and structural modifications is discussed.

Depth profiles of aggregate centers and nanodefects in LiF crystals irradiated with 34 MeV 84Kr, 56 MeV 40Ar and 12 MeV 12C ions

I. Manika, J. Maniks and R. Zabels acknowledge the national project IMIS2. A. Dauletbekova, A. Akilbekov, M. Zdorovets and A. Seitbayev acknowledge the GF AP05134257of Ministry of Education and Science the Republic of Kazakhstan.

Formation of dislocations and hardening of LiF under high-dose irradiation with 5–21 MeV 12C ions

R. Zabels, I. Manika, J. Maniks, and R.Grants acknowledge the national project IMIS2, and A. Dauletbekova, M. Baizhumanov, and M. Zdorovets the Ministry of Education and Science of the Republic of Kazakhstan for the financial support.

MeV-energy Xe ion-induced damage in LiF: The contribution of electronic and nuclear stopping mechanisms

The contribution of electronic and nuclear damage mechanisms in the modification of structure and micromechanical properties of LiF crystals irradiated with 52, 224, and 450 MeV Xe ions at fluences 1010–1014 ions cm−2 has been studied. The ion-induced formation of dislocations and hardening in LiF at fluences above 1010 ions cm−2 has been observed. The depth profiles of nanoindentation show a joint contribution of electronic excitation and nuclear (impact) mechanisms to the ion-induced hardening. The electronic excitation mechanism dominates in the major part of the ion range while the impact mechanism prevails in a narrow zone at the end of the ion range. The efficiency of hardening produc…

Modification of LiF structure by irradiation with swift heavy ions under oblique incidence

The structural modifications of LiF irradiated with swift heavy ions under oblique angles have been investigated using AFM, SEM, chemical etching, nanoindentation and optical absorption spectroscopy. LiF crystals were irradiated under incidence angles of 30 and 70 degrees with 2.2 GeV Au (fluence 57?l011 ions-cm2) and 150 MeV Kr ions (fluence 1012?1014 ions?cm?2). Structural study on sample cross-sections shows that two damage regions ? (1) nanostructured zone and (2) dislocation ? rich zone, which are typical for irradiations at normal incidence, appear also in samples irradiated under oblique angles. However in the latter case a more complex structure is formed that leads to stronger ion-…

CdTe Nanocrystal Synthesis in SiO 2 /Si Ion‐Track Template: The Study of Electronic and Structural Properties

Ion track template technology for fabrication of CdTe and CdO nanocrystals

Abstract CdTe and CdO nanocrystals were synthesized by chemical deposition into a-SiO2/n-Si ion track template formed by 200 MeV Xe ion irradiation with the fluence of 108 ions/cm2. Depending on the temperature of the solution CdTe + CdO and single-phase CdO with a hexagonal crystal structure were obtained, respectively. The study of the current – voltage characteristics of the obtained structure with the single-phase CdO allows us to estimate the number of grain boundaries and the height of the potential barrier, as well as the n-type conductivity.

Study of the Effect of Two Phases in Li4SiO4–Li2SiO3 Ceramics on the Strength and Thermophysical Parameters

This research was funded by the Science Committee of the Ministry of Education and Science of the Republic of Kazakhstan (No. BR11765580). The research of the team from Latvia (A.M., V.P. and A.I.P.) has been carried out within the framework of the EUROfusion Consortium, funded by the European Union via the Euratom Research and Training Programme (Grant Agreement No. 101052200—EUROfusion). Views and opinions expressed are however those of the author(s) only and do not necessarily reflect those of the European Union or the European Commission. Neither the European Union nor the European Commission can be held responsible for them. The research was partly (A.M., V.P. and A.I.P.) performed in …

Investigation of the Efficiency of Shielding Gamma and Electron Radiation Using Glasses Based on TeO2-WO3-Bi2O3-MoO3-SiO to Protect Electronic Circuits from the Negative Effects of Ionizing Radiation

This research was funded by the Science Committee of the Ministry of Education and Science of the Republic of Kazakhstan (No. AP09058081). EP, EE, and AIP thank the Institute of Solid State Physics, University for their support. ISSP UL as the Center of Excellence is supported through the Framework Program for European universities Union Horizon 2020, H2020-WIDESPREAD-01-2016-2017-TeamingPhase2 under Grant Agreement No. 739508, CAMART2 project.