0000000000281100

AUTHOR

Omar S. Martinez

showing 3 related works from this author

Photoluminescence Imaging and LBIC Characterization of Defects in mc-Si Solar Cells

2018

Today’s photovoltaic market is dominated by multicrystalline silicon (mc-Si) based solar cells with around 70% of worldwide production. In order to improve the quality of the Si material, a proper characterization of the electrical activity in mc-Si solar cells is essential. A full-wafer characterization technique such as photoluminescence imaging (PLi) provides a fast inspection of the wafer defects, though at the expense of the spatial resolution. On the other hand, a study of the defects at a microscopic scale can be achieved through the light-beam induced current technique. The combination of these macroscopic and microscopic resolution techniques allows a detailed study of the electric…

Materials sciencePhotoluminescenceSolid-state physicsSilicon020209 energychemistry.chemical_elementSolar cells multicrystalline silicon02 engineering and technologyMicroscopic scale0202 electrical engineering electronic engineering information engineeringMaterials ChemistryWaferElectrical and Electronic EngineeringImage resolutionbusiness.industryPhotovoltaic systemCiència dels materialsUMG siliconLBIC021001 nanoscience & nanotechnologyCondensed Matter PhysicsElectronic Optical and Magnetic MaterialsCharacterization (materials science)chemistrySemiconductorsOptoelectronics0210 nano-technologybusiness
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Non-radiative recombination centres in catalyst-free ZnO nanorods grown by atmospheric-metal organic chemical vapour deposition

2013

We have investigated the cathodoluminescence (CL) emission and the Raman spectra along individual ZnO nanorods grown by a catalyst-free method. The spatial correlation between the CL emission and the defect related Raman modes permits establishing a correspondence between the non-radiative recombination centres (NRRCs) and the defects responsible for the 275 cm−1 Raman band. According to this relation, the NRRCs in these nanorods are tentatively associated with complexes of zinc interstitials.

Materials scienceAcoustics and Ultrasonicsbusiness.industryAnalytical chemistrychemistry.chemical_elementCathodoluminescenceZincChemical vapor depositionCondensed Matter PhysicsSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsCatalysisMetalsymbols.namesakechemistryvisual_artsymbolsvisual_art.visual_art_mediumOptoelectronicsNanorodbusinessRaman spectroscopyNon-radiative recombinationJournal of Physics D: Applied Physics
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Non radiative recombination centers in ZnO nanorods

2013

ABSTRACTNowadays, the nature of the non radiative recombination centres in ZnO is a matter of controversy; they have been related to extended defects, zinc vacancy complexes, and surface defects, among other possible candidates. We present herein the optical characterization of catalyst free ZnO nanorods grown by atmospheric MOCVD by microRaman and cathodoluminescence spectroscopies. The correlation between the defect related Raman modes and the cathodoluminescence emission along the nanorods permits to establish a relation between the non radiative recombination centers and the defects responsible for the local Raman modes, which have been related to Zn interstitial complexes.

Materials sciencebusiness.industryCathodoluminescenceCharacterization (materials science)Catalysissymbols.namesakeChemical physicssymbolsOptoelectronicsNanorodMetalorganic vapour phase epitaxyLuminescencebusinessRaman spectroscopyNon-radiative recombinationMRS Proceedings
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