0000000000326584

AUTHOR

Pablo Esquinazi

showing 3 related works from this author

Defect spectroscopy of single ZnO microwires

2014

The point defects of single ZnO microwires grown by carbothermal reduction were studied by microphotoluminescence, photoresistance excitation spectra, and resistance as a function of the temperature. We found the deep level defect density profile along the microwire showing that the concentration of defects decreases from the base to the tip of the microwires and this effect correlates with a band gap narrowing. The results show a characteristic deep defect levels inside the gap at 0.88 eV from the top of the VB. The resistance as a function of the temperature shows defect levels next to the bottom of the CB at 110 meV and a mean defect concentration of 4 1018 cm3 . This combination of tech…

Materials sciencePhotoluminescenceDeep levelbusiness.industryBand gapCiencias FísicasWide-bandgap semiconductorNanowireGeneral Physics and Astronomy//purl.org/becyt/ford/1.3 [https]Crystallographic defect//purl.org/becyt/ford/1 [https]NanolithographyMicrowiresZnOOptoelectronicsDefectsSpectroscopybusinessCIENCIAS NATURALES Y EXACTASSpectroscopyFísica de los Materiales Condensados
researchProduct

Ac field dependence of the susceptibility of Bi2Sr2CaCu2O8 thin films at low dc fields

1996

We have measured the ac field dependence of the ac susceptibility of 400 nm thick Bi2212 thin films at low dc fields 0 ≤μ0Ha ≤ 1 mT in transverse geometry. We show that at reduced temperaturest≤0.85 the ac field dependence can be described by the non-linear Bean model after Brandt as in Y123 thin films. Att>0.85, however, we observe a decrease of the energy dissipation and shielding capability. The critical current density at zero dc field is given byjc−4×1010(1−(T/Tc))2.8±0.1 A/m2.

Dc fieldPhysicsTransverse planeNuclear magnetic resonanceCondensed matter physicsAc fieldElectromagnetic shieldingGeneral Physics and AstronomyCritical currentDissipationThin filmCzechoslovak Journal of Physics
researchProduct

On the superconductivity of graphite interfaces

2014

We propose an explanation for the appearance of superconductivity at the interfaces of graphite with Bernal stacking order. A network of line defects with flat bands appears at the interfaces between two slightly twisted graphite structures. Due to the flat band the probability to find high temperature superconductivity at these quasi one-dimensional corridors is strongly enhanced. When the network of superconducting lines is dense it becomes effectively two-dimensional. The model provides an explanation for several reports on the observation of superconductivity up to room temperature in different oriented graphite samples, graphite powders as well as graphite-composite samples published i…

SuperconductivityHigh-temperature superconductivityMaterials scienceCondensed Matter - Mesoscale and Nanoscale PhysicsPhysics and Astronomy (miscellaneous)Condensed matter physicsCondensed Matter::OtherCondensed Matter - SuperconductivityStackingFOS: Physical sciences02 engineering and technology021001 nanoscience & nanotechnology01 natural scienceslaw.inventionSuperconductivity (cond-mat.supr-con)Line defectsCondensed Matter::Materials SciencelawCondensed Matter::SuperconductivityMesoscale and Nanoscale Physics (cond-mat.mes-hall)0103 physical sciencesGraphiteFlat band010306 general physics0210 nano-technologyJETP Letters
researchProduct