0000000000399452
AUTHOR
Vincenzo Aglieri
New process of silicon carbide purification intended for silicon passivation
Abstract In this work, we report on a new, efficient and low cost process of silicon carbide (SiC) powder purification intended to be used in photovoltaic applications. This process consists on the preparation of porous silicon carbide layers followed by a photo-thermal annealing under oxygen atmosphere and chemical treatment. The effect of etching time on impurities removal efficiency was studied. Inductively coupled plasma atomic emission spectrometry (ICP-AES) results showed that the best result was achieved for an etching time of 10 min followed by gettering at 900 °C during 1 h. SiC purity is improved from 3N (99.9771%) to 4N (99.9946%). Silicon carbide thin films were deposited onto s…
Highly Sensitive Polarization Rotation Measurement through a High‐Order Vector Beam Generated by a Metasurface
The precise determination of the polarization state of light is fundamental for a vast variety of applications in remote sensing, astronomy, optics and terahertz technology, to name just a few. Typically, polarization characterization is performed by using a combination of multiple optical devices such as beam splitters, polarizers, and waveplates. Moreover, to achieve high-precision, balanced photodetectors and lock-in amplifiers are employed, thus contributing to increasing system complexity. Here, a technique for polarization rotation measurements with a dynamic range of 180° and a sensitivity of about 10−2 degrees is realized using a properly designed metasurface. Such device generates …
Antenna Tapering Strategy for Near-Field Enhancement Optimization in Terahertz Gold Nanocavities
Plasmonic nanoantennas (NAs) have received a growing attention in recent years due to their ability to confine light on sub-wavelength dimensions [1]. More recently, this property has been exploited in the terahertz (THz) frequency range (0.1–10 THz) for enhanced sensing and spectroscopy [2], as well as for more fundamental investigations [3]. These applications typically require high local electric fields that can be achieved by concentrating THz radiation into deeply sub-wavelength volumes located at the NAs extremities. However, the achievable near-field enhancement values are severely limited by the poor resonance quality factor of traditional rod-shaped THz NAs. Unlike what is commonly…
Design and Fabrication of Terahertz Bragg Gratings on a Two-Wire Waveguide
In this study, we present the design and the fabrication procedure of waveguide-integrated Bragg Gratings operating at THz frequencies.
Rotational Doppler Frequency Shift from Time‐Evolving High‐Order Pancharatnam–Berry Phase: A Metasurface Approach
The Doppler frequency shift of sound or electromagnetic waves has been widely investigated in many different contexts and, nowadays, represents a formidable tool in medicine, engineering, astrophysics, and optics. Such effect is commonly described in the framework of the universal energy-momentum conservation law. In particular, the rotational Doppler effect has been recently demonstrated using light carrying orbital angular momentum. When a wave undergoes a cyclic adiabatic transformation of its Hamiltonian, it is known to acquire the so-called Pancharatnam–Berry (PB) phase. In this work, an experimental evidence of the direct connection between the high-order PB phase time evolution on th…
Generation of Structured Light via Nano Structures and Applications
The generation of structured light by means of metasurfaces is presented and the applications in the characterizations of polarization rotation and Pancharatnam-Berry phase are discussed.
Fabrication and characterization of micrometer-scale ZnO memristors
Memristors are an interesting class of resistive random access memory (RRAM) based on the electrical switching of metal oxide film resistivity . They are characterized for exhibiting resistive switching between a high-resistance state (HRS) and a low-resistance state (LRS) and have been recently considered as one of the most promising candidates for next-generation nonvolatile memory devices because of their low power consumption, fast switching operation, nondestructive readout, and remarkable scalability. The device structure is simply an oxide layer sandwiched between two metal electrodes. The switching behaviour is dependent both on the oxide material and the choice of metal electrodes.…
Resistive switching of anodic TiO2-based Memristors
In recent years, memristors have attracted great attention owing to their simple fabrication process, high scalability, good compatibility with the CMOS technology, high switching speed, low power consumption and low cost for next-generation non-volatile memory technology [1]. The basic cell structure of a memristor is an insulator sandwiched between two metal electrodes. Among the materials being studied for memristors fabrication, binary metal oxides, such as TiO2, are most favourable because of their simple constituents, compatible with CMOS processes, and resistive to thermal/chemical damages. Anodizing is a an electrochemical low cost process carried out at room temperature to grow oxi…
TAPERING RESONANT NANOANTENNAS FOR ENHANCED THz LIGHT – NANOMATTER INTERACTIONS
Nel corso degli ultimi decenni la tecnologia terahertz (THz) è diventata un fruttuoso campo di ricerca grazie alla spinta ricevuta dal desiderio di sfruttarne le promettenti applicazioni in questa porzione dello spettro elettromagnetico. La biologia, la medicina e l’ingegneria sono soltanto alcuni dei settori che guardano con interesse alle ultime scoperte nella ricerca sulle onde THz. Questo enorme interesse nasce dalle peculiari proprietà di tali onde, come ad esempio: il carattere non ionizzante, l’opacità di svariati materiali solitamente trasparenti in altri intervalli di frequenze e per le potenziali ricadute positive nel campo della tecnologia dell’informazione. Una fra le applicazio…
Resistive switching in microscale anodic titanium dioxide-based memristors
Licence CC BY-NC-ND The potentiality of anodic TiO2 as an oxide material for the realization of resistive switching memory cells has been explored in this paper. Cu/anodic-TiO2/Ti memristors of different sizes, ranging from 1 × 1 μm2 to 10 × 10 μm2 have been fabricated and characterized. The oxide films were grown by anodizing Ti films, using three different process conditions. Measured IV curves have shown similar asymmetric bipolar hysteresis behaviors in all the tested devices, with a gradual switching from the high resistance state to the low resistance state and vice versa, and a R_OFF/R_ON ratio of 80 for the thickest oxide film devices.
Improving nanoscale terahertz field localization by means of sharply tapered resonant nanoantennas
Abstract Terahertz resonant nanoantennas have recently become a key tool to investigate otherwise inaccessible interactions of such long-wavelength radiation with nano-matter. Because of their high-aspect-ratio rod-shaped geometry, resonant nanoantennas suffer from severe loss, which ultimately limits their field localization performance. Here we show, via a quasi-analytical model, numerical simulations, and experimental evidence, that a proper tapering of such nanostructures relaxes their overall loss, leading to an augmented local field enhancement and a significantly reduced resonator mode volume. Our findings, which can also be extended to more complex geometries and higher frequencies,…
Forming-Free and Self-Rectifying Resistive Switching Effect in Anodic Titanium Dioxide-Based Memristors
The paper presents the resistive switching of electroforming-free Ti/anodic- TiO 2 /Cu memristors. Anodic TiO 2 thin films were prepared by anodizing Ti layers. Microscale devices were fabricated by direct laser-assisted photolithography. Experimental results showed a bipolar and self-rectifying behavior of the devices, which could be useful for crossbar array configurations. Moreover, a gradual resistive switching of the devices in both directions was observed, indicating the presence of multi-level resistance states.
Pulsed laser deposition of ZnO and VO2 films for memristor fabrication
Memristors are resistive switching memory devices which have attracted much attention over the last years for high-density memory applications because of their simple structure, small cell size, high speed, low power consumption, potential for 3-D stacking and excellent compatibility with the complementary metal-oxide-semiconductor (CMOS) technology [1]. Beside nonvolatile memory applications, memristors have been also proposed for other different applications including biosensors [2] and neuromorphic [3] circuits. The device structure is simply an oxide material sandwiched between two metal electrodes. The switching behavior is not only dependent on the oxide material but also on the choic…