showing 7 related works from this author
Implementation of compact VLSI FitzHugh-Nagumo neurons
2008
In this paper we show a low power and very compact VLSI implementation of a FitzHugh-Nagumo neuron for large network implementations. The circuit consists of only 17 small transistors and two capacitors and consumes less than 23 muW. It is composed of a nonlinear resistor and a lossy active inductor. We demonstrate that a simple low Q active inductor can be used instead of a complex one because the parasitic series resistor can be easily embedded to the FitzHugh-Nagumo model. We also perform a statistical analysis to check the robustness of the circuit against mismatch.
Realistic model of compact VLSI FitzHugh–Nagumo oscillators
2013
In this article, we present a compact analogue VLSI implementation of the FitzHugh–Nagumo neuron model, intended to model large-scale, biologically plausible, oscillator networks. As the model requires a series resistor and a parallel capacitor with the inductor, which is the most complex part of the design, it is possible to greatly simplify the active inductor implementation compared to other implementations of this device as typically found in filters by allowing appreciable, but well modelled, nonidealities. We model and obtain the parameters of the inductor nonideal model as an inductance in series with a parasitic resistor and a second order low-pass filter with a large cut-off freque…
Integration of GMR sensors with different technologies
2016
Less than thirty years after the giant magnetoresistance (GMR) effect was described, GMR sensors are the preferred choice in many applications demanding the measurement of low magnetic fields in small volumes. This rapid deployment from theoretical basis to market and state-of-the-art applications can be explained by the combination of excellent inherent properties with the feasibility of fabrication, allowing the real integration with many other standard technologies. In this paper, we present a review focusing on how this capability of integration has allowed the improvement of the inherent capabilities and, therefore, the range of application of GMR sensors. After briefly describing the …
Quasi‐digital front‐ends for current measurement in integrated circuits with giant magnetoresistance technology
2014
In this study, the authors report on two different electronic interfaces for low-power integrated circuits electric current monitoring through current-to-frequency (I-f) conversion schemes. This proposal displays the intrinsic advantages of the quasi-digital systems regarding direct interfacing and self-calibrating capabilities. In addition, as current-sensing devices, they have made use of the giant magnetoresistance (GMR) technology because of its high sensitivity and compatibility with standard complementary metal oxide semiconductor processes. Single elements and Wheatstone bridges based on spin-valves and magnetic tunnel junctions have been considered. In this sense, schematic-level si…
Giant Magnetoresistance (GMR) sensors for 0.35µm CMOS technology sub-mA current sensing
2014
This paper reports on the design and fabrication of microelectronic structures for non-invasive indirect electric current sensing at the IC level. A 0.35 ?m CMOS ASIC has been specifically developed for this purpose. Then, a low temperature post-process, fully compatible with the CMOS technology, has been applied for depositing Giant Magnetoresistive (GMR) sensors. Preliminary experimental results for obtaining the sensitivity of the devices are presented. The detection limit is estimated to be about 5 ?A.
Monolithic integration of GMR sensors for standard CMOS-IC current sensing
2017
Abstract In this work we report on the development of Giant Magnetoresistive (GMR) sensors for off-line current measurements in standard integrated circuits. An ASIC has been specifically designed and fabricated in the well-known AMS-0.35 μm CMOS technology, including the electronic circuitry for sensor interfacing. It implements an oscillating circuit performing a voltage-to-frequency conversion. Subsequently, a fully CMOS-compatible low temperature post-process has been applied for depositing the GMR sensing devices in a full-bridge configuration onto the buried current straps. Sensitivity and resolution of these sensors have been investigated achieving experimental results that show a de…
Quasi-digital conversion for resistive devices: application in GMR-based IC current sensors
2013
Resistive devices, including sensors, are used in a huge range of applications within different scenarios. When a complete system is considered, a quasi-digital output is often recommendable. If the conversion is operated at device level, some problems such as noise disturbs, insertion losses and so on, can be reduced. In this work, we describe a resistance-tofrequency (R-f) converter with a suggested application in low current monitoring by means of GiantMagnetoResistance (GMR) sensors. Specific devices have been designed and microfabricated. The system has been tested by means of discrete components with a PCB. The complete microsystem monolithic integration in a standard CMOS technology …