0000000000805513

AUTHOR

M. Plāte

showing 3 related works from this author

Mathematical modelling of the feed rod shape in floating zone silicon crystal growth

2017

Abstract A three-dimensional (3D) transient multi-physical model of the feed rod melting in the floating zone (FZ) silicon single-crystal growth process is presented. Coupled temperature, electromagnetic (EM), and melt film simulations are performed for a 4 inch FZ system, and the time evolution of the open melting front is studied. The 3D model uses phase boundaries and parameters from a converged solution of a quasi-stationary axisymmetric (2D) model of the FZ system as initial conditions for the time dependent simulations. A parameter study with different feed rod rotation, crystal pull rates and widths of the inductor main slit is carried out to analyse their influence on the evolution …

010302 applied physicsMaterials scienceSiliconbusiness.industryRotational symmetryTime evolutionPhase (waves)chemistry.chemical_element010103 numerical & computational mathematicsMechanicsCondensed Matter PhysicsRotation01 natural sciencesCondensed Matter::Soft Condensed MatterInorganic ChemistryMonocrystalline siliconCrystalOpticschemistry0103 physical sciencesMaterials ChemistryTransient (oscillation)0101 mathematicsbusinessJournal of Crystal Growth
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Validation of a 3D mathematical model for feed rod melting during floating zone Si crystal growth

2019

Abstract A mathematical model of global 3D heat transfer in floating zone silicon single crystal growth process is used to predict the shape of the open melting front of the feed rod. The model is validated using measurement data from research-scale growth experiments. Shape profiles of the open melting front are obtained from the feed rod leftover using a movable dial gauge. Azimuthal asymmetry of the rim of the open melting front is revealed in both simulations and measurements, quantitatively indicating the influence of the main slit of the inductor.

010302 applied physicsMaterials scienceSilicondigestive oral and skin physiologyProcess (computing)chemistry.chemical_elementCrystal growth02 engineering and technologyMechanicsGauge (firearms)021001 nanoscience & nanotechnologyCondensed Matter PhysicsInductor01 natural sciencesInorganic ChemistryDialAzimuthal asymmetrychemistry0103 physical sciencesHeat transferMaterials Chemistrysense organs0210 nano-technologyJournal of Crystal Growth
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Evaluation of the Performance of Published Point Defect Parameter Sets in Cone and Body Phase of a 300 mm Czochralski Silicon Crystal

2021

Prediction and adjustment of point defect (vacancies and self-interstitials) distribution in silicon crystals is of utmost importance for microelectronic applications. The simulation of growth processes is widely applied for process development and quite a few different sets of point defect parameters have been proposed. In this paper the transient temperature, thermal stress and point defect distributions are simulated for 300 mm Czochralski growth of the whole crystal including cone and cylindrical growth phases. Simulations with 12 different published point defect parameter sets are compared to the experimentally measured interstitial–vacancy boundary. The results are evaluated for stand…

Materials scienceSiliconGeneral Chemical EngineeringPhase (waves)chemistry.chemical_element02 engineering and technology01 natural sciencesInorganic ChemistryCrystalMonocrystalline silicon0103 physical sciencesheat transfercomputer simulationpoint defectsGeneral Materials SciencePoint (geometry)010302 applied physicsEquilibrium pointCrystallographyCzochralskisilicon021001 nanoscience & nanotechnologyCondensed Matter PhysicsCrystallographic defectthermal stressComputational physicschemistryQD901-999Heat transfer0210 nano-technologyCrystals
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