0000000001315837
AUTHOR
Armin Barthel
Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineering
The suitability of Ti as a band gap modifier for &alpha
Antiferromagnetism and p‐type conductivity of nonstoichiometric nickel oxide thin films
Plasma‐enhanced atomic layer deposition was used to grow non‐stoichiometric nickel oxide thin films with low impurity content, high crystalline quality, and p‐type conductivity. Despite the non‐stoichiometry, the films retained the antiferromagnetic property of NiO.
Research data supporting "Antiferromagnetism and p-type conductivity of non-stoichiometric nickel oxide thin films"
Raw data for the manuscript. The dataset contains the files used for the figures and tables in the Article and its Supporting Information. See the Readme file for a detailed description of the dataset.