6533b7cffe1ef96bd12585be
RESEARCH PRODUCT
Optical properties of wurtzite GaN/AlN quantum dots grown on non-polar planes: the effect of stacking faults in the reduction of the internal electric field
J. A. BudagoskyAlberto García-cristóbalNúria GarroS. FountaAna CrosBruno Daudinsubject
Materials sciencePhotoluminescenceStackingFOS: Physical sciences02 engineering and technologyElectronic structure01 natural sciencessymbols.namesakeCondensed Matter::Materials ScienceMesoscale and Nanoscale Physics (cond-mat.mes-hall)0103 physical sciencesGeneral Materials Science[PHYS.COND]Physics [physics]/Condensed Matter [cond-mat]ComputingMilieux_MISCELLANEOUSWurtzite crystal structure010302 applied physics[PHYS]Physics [physics]Condensed matter physicsCondensed Matter - Mesoscale and Nanoscale PhysicsMechanical EngineeringQuantum-confined Stark effectCiència dels materials021001 nanoscience & nanotechnologyCondensed Matter PhysicsCondensed Matter::Mesoscopic Systems and Quantum Hall EffectStark effectMechanics of MaterialsQuantum dotsymbolsCristalls0210 nano-technologyStacking faultdescription
The optical emission of non-polar GaN/AlN quantum dots has been investigated. The presence of stacking faults inside these quantum dots is evidenced in the dependence of the photoluminescence with temperature and excitation power. A theoretical model for the electronic structure and optical properties of non-polar quantum dots, taking into account their realistic shapes, is presented which predicts a substantial reduction of the internal electric field but a persisting quantum confined Stark effect, comparable to that of polar GaN/AlN quantum dots. Modeling the effect of a 3 monolayer stacking fault inside the quantum dot, which acts as zinc-blende inclusion into the wurtzite matrix, results in an additional 30 % reduction of the internal electric field and gives a better account of the observed optical features.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2016-07-01 |