6533b7cffe1ef96bd1259a49
RESEARCH PRODUCT
Atomic Layer Deposition of Ruthenium Films from (Ethylcyclopentadienyl)(pyrrolyl)ruthenium and Oxygen
Marianna KemellMassimo TallaridaJaan AarikKaupo KukliKaupo KukliTimo SajavaaraMikko RitalaMarkku LeskeläAleks AidlaMikko LaitinenEsa PuukilainenJonas Sundqvistsubject
Materials scienceSiliconInorganic chemistryAnalytical chemistryNucleationchemistry.chemical_element02 engineering and technology01 natural sciencesOxygenMetalAtomic layer deposition0103 physical sciencesMaterials ChemistryElectrochemistryta116010302 applied physicsta114Renewable Energy Sustainability and the EnvironmentAtmospheric temperature range021001 nanoscience & nanotechnologyCondensed Matter PhysicsSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsRutheniumchemistryvisual_artvisual_art.visual_art_medium0210 nano-technologyTindescription
Ru films were grown by atomic layer deposition in the temperature range of 275―350°C using (ethylcyclopentadienyl)(pyrrolyl)ruthenium and air or oxygen as precursors on HF-etched Si, SiO 2 , ZrO 2 , and TiN substrates. Conformal growth was examined on three-dimensional silicon substrates with 20:1 aspect ratio. ZrO 2 promoted the nucleation of Ru most efficiently compared to other substrates, but the films roughened quickly on ZrO 2 with increasing film thickness. The minimum number of cycles required to form continuous and conductive metal layers could be decreased by increasing the length of the oxygen pulse. In order to obtain well-conducting Ru films growth to thicknesses of at least 8―10 nm on any surface was necessary. Resistivities in the ranges of 30―60 and 14―16 μΩ · cm were achieved for 4―6 and 10―15 nm thick films, respectively. Delamination became an issue in the Ru films grown to thicknesses about 10 nm and higher.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2011-01-01 | Journal of The Electrochemical Society |