6533b7d0fe1ef96bd125a2f3

RESEARCH PRODUCT

Size dependent carrier thermal escape and transfer in bimodally distributed self assembled InAs/GaAs quantum dots

Giovanna TrevisiJosep Canet-ferrerPaola FrigeriBenito AlénJuan P. Martínez-pastorD. RivasIsaac SuárezGuillermo Muñoz-matutanoLuca Seravalli

subject

DYNAMICSMaterials scienceAtmospheric escapeCondensed matter physicsExcitonGeneral Physics and AstronomyElectronRate equationThermal transferEPITAXYCondensed Matter::Mesoscopic Systems and Quantum Hall EffectGallium arsenidechemistry.chemical_compoundCondensed Matter::Materials SciencechemistrySTATESself assembled quantum dots rate equations model carrier escape propertiesQuantum dotQuantum dot laserLUMINESCENCEPHOTOLUMINESCENCE

description

We have investigated the temperature dependent recombination dynamics in two bimodally distributed InAs self assembled quantum dots samples. A rate equations model has been implemented to investigate the thermally activated carrier escape mechanism which changes from exciton-like to uncorrelated electron and hole pairs as the quantum dot size varies. For the smaller dots, we find a hot exciton thermal escape process. We evaluated the thermal transfer process between quantum dots by the quantum dot density and carrier escape properties of both samples. © 2012 American Institute of Physics.

yearjournalcountryeditionlanguage
2012-06-15
10.1063/1.4729315http://hdl.handle.net/10261/133793