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RESEARCH PRODUCT
Vapor phase epitaxy of Hg1−xCdxI2 on sapphire
V. MuñozN.v. SochinskiiJ. AlamoCandid Reigsubject
Inorganic ChemistryChemistryScanning electron microscopeMaterials ChemistrySapphireAnalytical chemistryMetalorganic vapour phase epitaxyCrystalliteCondensed Matter PhysicsEpitaxyLayer (electronics)Cadmium telluride photovoltaicsSolid solutiondescription
Abstract We demonstrate the possibility of growing Hg 1− x Cd x I 2 layers on sapphire substrates by vapor-phase epitaxy (VPE). The successful growth has been carried out using an α-HgI 2 polycrystalline source and a CdTe buffer layer grown on sapphire by metalorganic vapor phase epitaxy (MOVPE) before the Hg 1− x Cd x I 2 VPE growth. The Hg 1− x Cd x I 2 /sapphire 20–40 μm thick layers with a uniform composition in the range of x =0.2–0.6 were grown at 220–250°C for 70–300 h. The layers were studied by scanning electron microscopy, energy disperse X-ray analysis and X-ray diffractometry. Results on the layer characterization are reported and the effect of VPE conditions on the layer properties is considered.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 1998-08-01 | Journal of Crystal Growth |