6533b7ddfe1ef96bd1275853

RESEARCH PRODUCT

CulnSe2/Zn(S,O,OH) junction on Mo foil by electrochemical and chemical route for photovoltaic applications

Roberto Luigi OliveriRosalinda InguantaGermano FerraraSalvatore PiazzaCarmelo SunseriAntonino ParisiLuciano CurcioGabriele AdamoV RoccaRiccardo PerniceAndrea Ando'Salvatore StivalaA GiordanoSaverio GuarinoAlfonso Carmelo CinoAlessandro Busacca

subject

photovoltaicSSettore ING-IND/23 - Chimica Fisica ApplicataElectrodepositionSolar CellSettore ING-INF/02 - Campi ElettromagneticiThin FilmCulnSe2Settore ING-INF/01 - ElettronicaMo foil

description

Electrodeposition is a convenient technique for the development of low cost materials for photovoltaic (PV) device processing. Using a single step electrodeposition route, several groups have fabricated CIS (CuInSe) and CIGS (CuInGaSe) films [1]. One of the most important requirements for successful application of one-step electrodeposition film formation, is the ability to control composition of the deposited films and to develop polycrystalline microstructures with a low surface roughness and high sintered density. In this preliminary work, CIS films were produced by single bath electrodeposition finding the optimal conditions in order to achieve a dense film with high crystallinity and uniform, flat surfaces, which are of critical importance for photovoltaic applications. Electrodeposition was carried out in the potentiostatic mode using a conventional three-electrode configuration.

yearjournalcountryeditionlanguage
2014-01-01
10.1109/fotonica.2014.6843915http://hdl.handle.net/10447/104781