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RESEARCH PRODUCT
Influence of strain in the reduction of the internal electric field in GaN/AlN quantum dots grown ona-plane 6H-SiC
Andrés CantareroAna CrosS. FountaNúria GarroHenri MarietteBruno DaudinJ. A. BudagoskyAlberto García-cristóbalsubject
Condensed matter physicsChemistryCondensed Matter PhysicsPolarization (waves)PiezoelectricityElectronic Optical and Magnetic MaterialsSpontaneous polarizationsymbols.namesakeStrain distributionQuantum dotElectric fieldsymbolsRaman spectroscopyWurtzite crystal structuredescription
The strain state of stacks of GaN/AIN quantum dots (QDs) grown on (0001) and (1120) 6H-SiC has been investigated by means of Raman spectroscopy. Depending on the orientation of the wurtzite axis with respect to the growth direction it is found that the piezoelectric contribution to the electrostatic potential may either reinforce that arising from the spontaneous polarization or oppose it. The experimental results are compared with a theoretical model for the strain and polarization field in QDs of both orientations that allows the calculation of the electrostatic potential in the QDs. Both the experimental results and the theoretical model indicate that the internal electric field and electrostatic potential are strongly reduced in the QDs grown on (1120) 6H-SiC as compared to those grown along the wurtzite c-axis.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2006-06-01 | physica status solidi (b) |