6533b825fe1ef96bd1282a79
RESEARCH PRODUCT
Graphene‐SiO2 Interaction from Composites to Doping
Franco Mario GelardiFilippo GiannazzoMarco CannasAngelo ArmanoRaffaella Lo NigroSimonpietro AgnelloEmanuela SchiliròGianpiero Buscarinosubject
Materials scienceStrain (chemistry)GraphenegrapheneDopingdopingSurfaces and InterfacesCondensed Matter PhysicsSurfaces Coatings and FilmsElectronic Optical and Magnetic Materialslaw.inventionstrainsilicalawgraphene dopingMaterials ChemistryElectrical and Electronic EngineeringComposite materialdescription
An overview of the interaction between monolayer graphene and SiO2 dielectric substrate is reported focusing on the effect this latter has on doping and strain induced by thermal treatments in controlled atmosphere. The disentanglement of strain and doping is highlighted and the comparison with another dielectric substrate of Al2O3 evidences the critical role that the substrate has in the electronic properties of graphene. The reported results pave the way for microelectronic devices based on graphene on dielectrics and for Fermi level tuning in composites of graphene and nanoparticles.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2019-01-15 |