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RESEARCH PRODUCT
Characterization of the defect density states in MoOx for c-Si solar cell applications
Olindo IsabellaS. MirabellaRobert MacalusoAntonino GulinoD. ScireMiro ZemanIsodiana CrupiMauro Moscasubject
Materials scienceAbsorption spectroscopyc-Si solar cell photovoltaic transition metal oxide molybdenum oxide density of states small polaronAnnealing (metallurgy)02 engineering and technologyPolaron01 natural sciencesMolecular physicsSettore ING-INF/01 - Elettronicalaw.inventionlaw0103 physical sciencesSolar cellMaterials ChemistryElectrical and Electronic EngineeringSpectroscopy010302 applied physicsThin layersDensity of statesPhotothermal therapy021001 nanoscience & nanotechnologyCondensed Matter Physicsc-Si solar cellMolybdenum oxideElectronic Optical and Magnetic MaterialsSmall polaronTransition metal oxideDensity of states0210 nano-technologyPhotovoltaicDensity of statedescription
Thin layers of MoOx have been deposited by thermal evaporation followed by post-deposition annealing. The density of states distributions of the MoOx films were extracted deconvoluting the absorption spectra, measured by a photothermal deflection spectroscopy setup, including the small polaron contribution. Results revealed a sub-band defect distribution centered 1.1 eV below the conduction band; the amplitude of this distribution was found to increase with post-deposition annealing temperature and film thickness.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2021-11-01 |