6533b82bfe1ef96bd128decc
RESEARCH PRODUCT
Raman study and theoretical calculations of strain in GaN quantum dot multilayers
Bruno DaudinJosé M. LlorensAndrés CantareroAlberto García-cristóbalNoelle GogneauEva MonroyNúria GarroAna Crossubject
Materials scienceStrain (chemistry)Condensed matter physicsPhononCondensed Matter::Mesoscopic Systems and Quantum Hall EffectCondensed Matter PhysicsElectronic Optical and Magnetic MaterialsInhomogeneous strainCondensed Matter::Materials Sciencesymbols.namesakeQuantum dotsymbolsRaman spectroscopyEnergy (signal processing)description
Changes in strain and phonon mode energy in stacks of self-assembled GaN quantum dots embedded in AlN have been studied by means of Raman spectroscopy as a function of the number of periods. The ${E}_{2H}$ phonon modes related to the quantum dots and AlN spacers are clearly resolved, and their energies allow monitoring the state of strain of the dots and AlN spacers simultaneously. The evolution of the measured phonon frequencies and the associated strains are discussed in comparison with theoretical calculations of the inhomogeneous strain distribution in a system of coherent misfitting inclusions.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2006-03-10 | Physical Review B |