6533b82cfe1ef96bd128f61b
RESEARCH PRODUCT
Mapováni spinů povrchových a bulkových Rashba stavů v tenkých vrstvách feroelektrického α-GeTe(111)
R. WallauerHenrieta VolfováBorekHubert EbertJens KellnerSergey V. ChernovOliver RaderHans-joachim ElmersChristian TuscheChristian TuscheKaterina MedjanikJaime Sánchez-barrigaRaffaella CalarcoMarkus MorgensternJürgen BraunD. KutnyakhovRui Ning WangMarcus LiebmannJos E. BoschkerMartin EllguthMartin EllguthJan MinárJan MinárGerd Schönhensesubject
Point reflectionFOS: Physical sciences02 engineering and technologyDFT01 natural sciencesCondensed Matter::Materials ScienceElectric field0103 physical sciencesRashba efectTexture (crystalline)010306 general physicsControlling collective statesSpin-½PhysicsCondensed Matter - Materials ScienceSpin polarizationCondensed matter physicsSpintronicsMaterials Science (cond-mat.mtrl-sci)021001 nanoscience & nanotechnologyHelicityFerroelectricityRashba efekt0210 nano-technologyphotoemissionfotoemisedescription
Rozbíjení inverzní symetrie ve fereeleRashba efekt; Fotoemisse; DFTktrickém polovodiči způsobuje děleni stavů, tzv Rashba efekt. V tomto článku ukazujeme kompletně mapování spinové polarizace těchto Rashba stavů za pomoci spinovo rozlišené fotoemisse. The breaking of bulk inversion symmetry in ferroelectric semiconductors causes a Rashba-type spin splitting of electronic bulk bands. This is shown by a comprehensive mapping of the spin polarization of the electronic bands in ferroelectric α- GeTe(111) films using a time-of-flight momentum microscope equipped with an imaging spin filter that enables a simultaneous measurement of more than 10 000 data points. The experiment reveals an opposite spin helicity of the inner and outer Rashba bands with a different spin polarization in agreement with theoretical predictions, confirming a complex spin texture of bulk Rashba states. The outer band has about twice larger spin polarization than the inner one, giving evidence of a spin-orbit effect being related to the orbital composition of the band states. The switchable inner electric field of GeTe implies new functionalities for spintronic devices.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2015-12-04 |