6533b831fe1ef96bd1299a65

RESEARCH PRODUCT

Sb-implanted ZnO ultra-thin films

Graziella MalandrinoAntonino GulinoMaria R. CatalanoIsodiana CrupiSalvatrice MillesiFrancesco PrioloGiuliana Impellizzeri

subject

AntimonyMaterials scienceCondensed Matter Physic02 engineering and technology010402 general chemistrySettore ING-INF/01 - Elettronica01 natural sciencesSettore FIS/03 - Fisica Della MateriaSpectral lineIonTransmittanceZnO filmDeposition (phase transition)Mechanics of MaterialGeneral Materials ScienceMetalorganic vapour phase epitaxyThin filmFilmDiodeDiodeHexagonal crystal systembusiness.industryMechanical Engineering021001 nanoscience & nanotechnologyCondensed Matter Physics0104 chemical sciencesMechanics of MaterialsMOCVDZnOZnO film; antimony; diodeOptoelectronicsMaterials Science (all)0210 nano-technologybusiness

description

Mild heating of the Zn(C5F6HO2)(2)center dot 2H(2)O center dot CH3(OCH2CH2)(2)OCH3 precursor allowed MOCVD deposition of ZnO films, in a low-pressure horizontal hot-wall reactor, on ITO substrates. The ZnO films were subsequently implanted with Sb ions. XRD measurements provided evidence that they consist of hexagonal, (002) and (101) oriented, crystals. UV-vis spectra showed that the transmittance of these films in the visible region is about 90%. The Sb implanted ZnO film showed a current-voltage characteristic that resembles that of a rectifying diode. This study represents the first example of Sb-implantation in ZnO films obtained by MOCVD.

yearjournalcountryeditionlanguage
2017-10-01Materials Science in Semiconductor Processing
https://doi.org/10.1016/j.mssp.2016.12.025