6533b851fe1ef96bd12a9038
RESEARCH PRODUCT
Temperature dependence of the effective mobility edge and recombination dynamics of free and localized excitons in InGaP/GaAs quantum wells
Marcello ColocciLuisa GonzálezJuan P. Martínez-pastorC. RudamasAnna Vinattierisubject
PhysicsCondensed matter physicsCondensed Matter::OtherExcitonEdge (geometry)Condensed Matter::Mesoscopic Systems and Quantum Hall EffectCondensed Matter PhysicsAtomic and Molecular Physics and OpticsSpectral lineElectronic Optical and Magnetic MaterialsCondensed Matter::Materials Sciencesymbols.namesakeQuantum wellsDisordersymbolsFermi–Dirac statisticsContinuous wavePhotoluminescenceRecombinationBiexcitonQuantum welldescription
3 páginas, 1 figura.-- Comunicación presentada al Proceedings of the International Conference on Superlattices, Nano-structures and Nano-devices ICSNN 2002 o-structures and Nano-devices ICSNN 2002.
year | journal | country | edition | language |
---|---|---|---|---|
2003-04-01 | Physica E: Low-dimensional Systems and Nanostructures |