6533b851fe1ef96bd12a9038

RESEARCH PRODUCT

Temperature dependence of the effective mobility edge and recombination dynamics of free and localized excitons in InGaP/GaAs quantum wells

Marcello ColocciLuisa GonzálezJuan P. Martínez-pastorC. RudamasAnna Vinattieri

subject

PhysicsCondensed matter physicsCondensed Matter::OtherExcitonEdge (geometry)Condensed Matter::Mesoscopic Systems and Quantum Hall EffectCondensed Matter PhysicsAtomic and Molecular Physics and OpticsSpectral lineElectronic Optical and Magnetic MaterialsCondensed Matter::Materials Sciencesymbols.namesakeQuantum wellsDisordersymbolsFermi–Dirac statisticsContinuous wavePhotoluminescenceRecombinationBiexcitonQuantum well

description

3 páginas, 1 figura.-- Comunicación presentada al Proceedings of the International Conference on Superlattices, Nano-structures and Nano-devices ICSNN 2002 o-structures and Nano-devices ICSNN 2002.

https://doi.org/10.1016/s1386-9477(02)00774-9