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RESEARCH PRODUCT
Graphene p-Type Doping and Stability by Thermal Treatments in Molecular Oxygen Controlled Atmosphere
Gianpiero BuscarinoAurora PiazzaAurora PiazzaSimonpietro AgnelloMarco CannasFilippo GiannazzoGabriele FisichellaFabrizio RoccaforteA. La MagnaFranco Mario Gelardisubject
Controlled atmosphereMaterials scienceSiliconGrapheneElectronic Optical and Magnetic MaterialDopinggrapheneSettore FIS/01 - Fisica SperimentaleAnalytical chemistrychemistry.chemical_elementSurfaces Coatings and FilmSubstrate (electronics)Thermal treatmentOxygenSurfaces Coatings and FilmsElectronic Optical and Magnetic Materialslaw.inventionGeneral EnergyEnergy (all)chemistrylawMonolayeroxygen annealingp-type dopingPhysical and Theoretical Chemistrydescription
Doping and stability of monolayer low defect content graphene transferred on a silicon dioxide substrate on silicon are investigated by micro-Raman spectroscopy and atomic force microscopy (AFM) during thermal treatments in oxygen and vacuum controlled atmosphere. The exposure to molecular oxygen induces graphene changes as evidenced by a blue-shift of the G and 2D Raman bands, together with the decrease of I2D/IG intensity ratio, which are consistent with a high p-type doping (∼1013 cm-2) of graphene. The successive thermal treatment in vacuum does not affect the induced doping showing this latter stability. By investigating the temperature range 140-350 °C and the process time evolution, the thermal properties of this doping procedure are characterized, and an activation energy of ∼56 meV is estimated. These results are interpreted on the basis of molecular oxygen induced ∼1013 cm-2 p-type doping of graphene with stability energy >49 meV and postdoping reactivity in ambient atmosphere due to reaction of air molecules with oxygen trapped between graphene and substrate.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2015-09-16 |