0000000000068859
AUTHOR
Aurora Piazza
showing 11 related works from this author
Micro-Raman characterization of graphene grown on SiC(000-1)
2014
Graphene (Gr) was grown on the C face of 4H-SiC under optimized conditions (high annealing temperatures ranging from 1850 to 1950°C in Ar ambient at 900 mbar) in order to achieve few layers of Gr coverage. Several microscopy techniques, including optical microscopy (OM), ?Raman spectroscopy, atomic force microscopy (AFM) and atomic resolution scanning transmission electron microscopy (STEM) have been used to extensively characterize the lateral uniformity of the as-grown layers at different temperatures. ?Raman analysis provided information on the variation of the number of layers, of the stacking-type, doping and strain.
Substrate and atmosphere influence on oxygen p-doped graphene
2016
Abstract The mechanisms responsible for p-type doping of substrate supported monolayer graphene (Gr) by thermal treatments in oxygen ambient have been investigated by micro-Raman spectroscopy, atomic force microscopy (AFM) and X-ray Photoelectron Spectroscopy (XPS), considering commonly employed dielectric substrates, such as SiO 2 and Al 2 O 3 thin films grown on Si. While a high p-type doping (∼10 13 cm −2 ) is observed for Gr on SiO 2 , no significant doping is found for Gr samples on the Al 2 O 3 substrate, suggesting a key role of the Gr/SiO 2 interface states in the trapping of oxygen responsible for the Gr p-type doping. Furthermore, we investigated the doping stability of Gr on SiO…
Nanoscale inhomogeneity of the Schottky barrier and resistivity inMoS2multilayers
2015
Conductive atomic force microscopy (CAFM) is employed to investigate the current injection from a nanometric contact (a Pt coated tip) to the surface of ${\text{MoS}}_{2}$ thin films. The analysis of local current-voltage characteristics on a large array of tip positions provides high spatial resolution information on the lateral homogeneity of the $\mathrm{tip}/{\text{MoS}}_{2}$ Schottky barrier ${\mathrm{\ensuremath{\Phi}}}_{B}$ and ideality factor $n$, and on the local resistivity ${\ensuremath{\rho}}_{\text{loc}}$ of the ${\text{MoS}}_{2}$ region under the tip. Here, ${\mathrm{\ensuremath{\Phi}}}_{B}=300\ifmmode\pm\else\textpm\fi{}24\phantom{\rule{0.28em}{0ex}}\text{meV}, n=1.60\ifmmode…
In-situ monitoring by Raman spectroscopy of the thermal doping of graphene and MoS2 in O-2-controlled atmosphere
2017
The effects of temperature and atmosphere (air and O2) on the doping of monolayers of graphene (Gr) on SiO2 and Si substrates, and on the doping of MoS2 multilayer flakes transferred on the same substrates have been investigated. The investigations were carried out by in situ micro-Raman spectroscopy during thermal treatments up to 430 °C, and by atomic force microscopy (AFM). The spectral positions of the G and 2D Raman bands of Gr undergo only minor changes during treatment, while their amplitude and full width at half maximum (FWHM) vary as a function of the temperature and the used atmosphere. The thermal treatments in oxygen atmosphere show, in addition to a thermal effect, an effect a…
A rapid and eco-friendly route to synthesize graphene-doped silica nanohybrids
2016
International audience; In the present study, the possibility to synthesize graphene oxide (GO)-based nanohybrids with pure and O2-doped silica nanoparticles by a rapid and easy hydrothermal process has been explored. The nanohybrids were prepared by varying the type of silica nanoparticles (average diameter 7 nm or 40 nm) and the silica/GO weight ratio. All the materials were fully characterized by spectroscopic and morphological techniques.The experimental results revealed that it is possible to tune the characteristics of the obtained nanohybrids, such as morphology and amount of ester/ether linkages upon varying the preparation parameters, together with the nanosilica's typology and the…
Structural and thermal stability of graphene oxide-silica nanoparticles nanocomposites
2017
Abstract The investigation of the thermal stability up to 400 °C of Graphene Oxide (GO) and GO-silica nanoparticles (n-SiO2) composites prepared by direct mixture of GO and n-SiO2 is reported. Using Scanning Electron Microscopy, X-ray Photoelectron Spectroscopy, Energy Dispersive X-ray analysis, Atomic Force Microscopy, Raman and Infrared absorption measurements a thorough characterization of the prepared materials is carried out. By deepening the changes induced in the 2D Raman spectral region of GO at about 2900 cm−1 the comprehension of an interplay, driven by the thermally induced changes of the material, between inter-valley and intra-valley vibrational transitions is elucidated. This …
Current injection from metal to MoS2 probed at nanoscale by conductive atomic force microscopy
2016
Contacts with MoS2 are currently the object of many investigations, since current injection through metal/MoS2 interfaces represents one of the limiting factors to the performance of MoS2 thin film transistors. In this paper, we employed conductive atomic force microscopy (CAFM) to investigate the current injection mechanisms from a nanometric contact (a Pt coated tip) to the surface of MoS2 thin films exfoliated on SiO2. The analysis of local current-voltage (I-V) characteristics on a large array of tip positions provided high spatial resolution information on the lateral homogeneity of the tip/MoS2 Schottky barrier Phi(B) and of the ideality factor n. From the histograms of the measured P…
Graphene p-Type Doping and Stability by Thermal Treatments in Molecular Oxygen Controlled Atmosphere
2015
Doping and stability of monolayer low defect content graphene transferred on a silicon dioxide substrate on silicon are investigated by micro-Raman spectroscopy and atomic force microscopy (AFM) during thermal treatments in oxygen and vacuum controlled atmosphere. The exposure to molecular oxygen induces graphene changes as evidenced by a blue-shift of the G and 2D Raman bands, together with the decrease of I2D/IG intensity ratio, which are consistent with a high p-type doping (∼1013 cm-2) of graphene. The successive thermal treatment in vacuum does not affect the induced doping showing this latter stability. By investigating the temperature range 140-350 °C and the process time evolution, …
Impact of contact resistance on the electrical properties of MoS2 transistors at practical operating temperatures
2017
Molybdenum disulphide (MoS2) is currently regarded as a promising material for the next generation of electronic and optoelectronic devices. However, several issues need to be addressed to fully exploit its potential for field effect transistor (FET) applications. In this context, the contact resistance, RC, associated with the Schottky barrier between source/drain metals and MoS2 currently represents one of the main limiting factors for suitable device performance. Furthermore, to gain a deeper understanding of MoS2 FETs under practical operating conditions, it is necessary to investigate the temperature dependence of the main electrical parameters, such as the field effect mobility (μ) an…
Interfacial disorder of graphene grown at high temperatures on 4H-SiC(000-1)
2016
This paper presents an investigation of the morphological and structural properties of graphene (Gr) grown on SiC(000-1) by thermal treatments at high temperatures (from 1850 to 1950 °C) in Ar at atmospheric pressure. Atomic force microscopy and micro-Raman spectroscopy showed that the grown Gr films are laterally inhomogeneous in the number of layers, and that regions with different stacking-type (coupled or decoupled Gr films) can coexist in the same sample. Scanning transmission electron microscopy and electron energy loss spectroscopy shoed that a nm-thick C-Si-O amorphous layer is present at the interface between Gr and SiC. Basing on these structural results, the mechanisms of Gr grow…
Effect of air on oxygen p-doped graphene on SiO2
2016
Stability in ambient air or in vacuum-controlled atmosphere of molecular oxygen-induced p-type doping of graphene monolayer on SiO2 substrate on Si is investigated by micro-Raman spectroscopy and atomic force microscopy (AFM). The Raman 2D and G bands spectral positions and amplitude ratio are affected by the permanence in air atmosphere in a time scale of months whereas the vacuum safely maintains the doping effects determined through Raman bands. No morphological effects are induced by the doping and post-doping treatments. A reactivity of ambient molecular gas with stably trapped oxygen is suggested to induce the doping modification. (C) 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim