6533b7cffe1ef96bd12586eb

RESEARCH PRODUCT

Micro-Raman characterization of graphene grown on SiC(000-1)

C. SpinellaFabrizio RoccaforteMario ScuderiA. La MagnaRositza YakimovaAurora PiazzaIoannis DeretzisGiuseppe NicotraMarco CannasG. FisichellaFranco Mario GelardiSimonpietro AgnelloFilippo Giannazzo

subject

Kelvin probe force microscopeMaterials science4H-SiCGrapheneSettore FIS/01 - Fisica SperimentaleAnalytical chemistryConductive atomic force microscopySTEMlaw.inventionAtomic layer depositionOptical microscopelawMicroscopyScanning transmission electron microscopyμRamanMechanics of MaterialMaterials Science (all)AFMGraphene?RamanInstrumentationPhotoconductive atomic force microscopy

description

Graphene (Gr) was grown on the C face of 4H-SiC under optimized conditions (high annealing temperatures ranging from 1850 to 1950°C in Ar ambient at 900 mbar) in order to achieve few layers of Gr coverage. Several microscopy techniques, including optical microscopy (OM), ?Raman spectroscopy, atomic force microscopy (AFM) and atomic resolution scanning transmission electron microscopy (STEM) have been used to extensively characterize the lateral uniformity of the as-grown layers at different temperatures. ?Raman analysis provided information on the variation of the number of layers, of the stacking-type, doping and strain.

yearjournalcountryeditionlanguage
2014-10-01
10.1109/nmdc.2014.6997410http://hdl.handle.net/10447/128127