6533b853fe1ef96bd12ac2fd
RESEARCH PRODUCT
Memory effects in single-electron nanostructures
Isodiana CrupiM. VulpioEmanuele RiminiG. AmmendolaSalvatore LombardoM. MelanotteCosimo Gerardisubject
Coulomb blockadeMaterials scienceNanostructurePhysics and Astronomy (miscellaneous)Condensed matter physicsQuantum dotCoulomb blockadeCondensed Matter PhysicCondensed Matter PhysicsSettore ING-INF/01 - ElettronicaAtomic and Molecular Physics and OpticsElectronic Optical and Magnetic MaterialsSingle electronMemorySingle-electronGeneral Materials ScienceMaterials Science (all)description
We investigate the memory function at room temperature in devices based on quantum dots. By Low Pressure Chemical Vapour Deposition (LPCVD) we deposited Si dots embedded in SiO2. On these devices flat band voltage shifts were well detected at low write voltages for write times of the order of milliseconds, and furthermore, a plateau in the flat band voltage shift, maybe consequence of Coulomb blockdale, was observed.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2001-11-01 |