6533b856fe1ef96bd12b26c0
RESEARCH PRODUCT
Electronic structure of delta-doped $La:SrTiO_{3}$ layers by hard X-ray photoelectron spectroscopy
Andrei GloskovskiiSusanne StemmerAdam KajdosYoshiyuki YamashitaW. DrubeBharat JalanShigenori UedaAlexander KaiserCharles S. FadleyG. ContiAlexander X. GrayKeisuke Kobayashisubject
Materials sciencePhysics and Astronomy (miscellaneous)02 engineering and technology01 natural sciencesElectron spectroscopyBand offsetsymbols.namesakeCondensed Matter::Materials ScienceX-ray photoelectron spectroscopyCondensed Matter::Superconductivity0103 physical sciencesddc:530010306 general physicsbusiness.industryFermi levelDopingFermi energy021001 nanoscience & nanotechnologysymbolsDensity of statesOptoelectronicsCondensed Matter::Strongly Correlated ElectronsAtomic physics0210 nano-technologybusinessLayer (electronics)description
We have employed hard x-ray photoemission (HAXPES) to study a delta-doped SrTiO3 layer that consisted of a 3-nm thickness of La-doped SrTiO3 with 6% La embedded in a SrTiO3 film. Results are compared to a thick, uniformily doped La:SrTiO3 layer. We find no indication of a band offset for the delta-doped layer, but evidence of the presence of Ti3+ in both the thick sample and the delta-layer, and indications of a density of states increase near the Fermi energy in the delta-doped layer. These results further demonstrate that HAXPES is a powerful tool for the non-destructive investigation of deeply buried doped layers.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2012-06-25 |