6533b857fe1ef96bd12b3939
RESEARCH PRODUCT
Polymorphism in phase-change materials: melt-quenched and as-deposited amorphous structures in Ge2Sb2Te5from density functional calculations
Julen LarruceaJaakko AkolaJaakko AkolaJaakko AkolaRobert O. JonesRobert O. Jonessubject
Materials scienceExtended X-ray absorption fine structureCondensed Matter PhysicsElectronic Optical and Magnetic Materialslaw.inventionAmorphous solidBond lengthCrystallographyPhase changePolymorphism (materials science)lawCovalent bondCrystallizationValence electrondescription
The as-deposited (AD) amorphous structure of the prototype phase change material Ge${}_{2}$Sb${}_{2}$Te${}_{5}$ (GST-225) has been studied by density functional calculations for a 648-atom sample generated by computer-aided deposition at 300 K. The AD sample differs from a melt-quenched (MQ) sample in essential ways: (1) Ge atoms are predominantly tetrahedrally coordinated, and (2) homopolar and Ge-Sb bonds are more common and reduce the number of $\mathit{ABAB}$ squares ($A=\mathrm{Ge}$, Sb; $B=\mathrm{Te}$), the characteristic building blocks of the material. The first observation resolves the contradiction between measured (EXAFS) and calculated Ge-Te bond lengths, and the latter explains the very different crystallization speeds. Sb and Te have higher chemical coordination than suggested by the ``8-$N$ rule'' of covalent networks ($N$ is the number of valence electrons). The EXAFS signal calculated for AD agrees much better with experiment than that calculated for MQ.
year | journal | country | edition | language |
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2011-03-10 | Physical Review B |