6533b85efe1ef96bd12c0645

RESEARCH PRODUCT

Structure and properties of GaNxOy films grown by nitridation of GaAs (100) substrates

F. FabreguetteM. MesnierValérie PotinLuc ImhoffC. Josse-courtySylvie BourgeoisOlivier HeintzM.c. Marco De LucasM. SacilottiM. Linsavanh

subject

Analytical chemistrychemistry.chemical_elementChemical vapor depositionCondensed Matter PhysicsOxygenInorganic Chemistrysymbols.namesakeCrystallographychemistryMaterials ChemistrysymbolsMetalorganic vapour phase epitaxyThin filmGalliumHigh-resolution transmission electron microscopyRaman spectroscopyWurtzite crystal structure

description

GaAs (100) substrates have been heat-treated in a metal-organic chemical vapor deposition reactor under flows of NH 3 and an oxygen organo-metallic precursor at temperatures between 650°C and 750°C. Yellowish films formed at the surface of all the samples. Gallium, nitrogen and oxygen were detected by EDX analysis of the films. The oxygen content was estimated in the range of at 5-10 at% depending on the heat-treatment temperature. X-ray diffraction and HRTEM results indicate that the structure of the films corresponds to the hexagonal wurtzite phase of GaN with an expanded unit cell. Raman spectra show hands corresponding to the Raman active GaN modes as well as disorder-activated broad bands below 450 cm -1 related to the oxygen content in the films.

yearjournalcountryeditionlanguage
2004-01-01Journal of Crystal Growth
https://doi.org/10.1016/j.jcrysgro.2003.11.022