6533b85ffe1ef96bd12c1d01
RESEARCH PRODUCT
Photoemission study of the reactivity of barium towards SiOx thermal films
Luc ImhoffBruno DomenichiniT. GenevèsValérie PotinSylvie BourgeoisZhongshan Lisubject
Materials scienceAnnealing (metallurgy)Inorganic chemistrychemistry.chemical_element02 engineering and technology01 natural scienceslaw.inventionMetalchemistry.chemical_compoundlaw0103 physical sciencesMaterials ChemistrySilicon oxide010302 applied physicsBarium oxideChemical process of decompositionBariumSurfaces and Interfaces021001 nanoscience & nanotechnologyCondensed Matter PhysicsSynchrotronSilicateSurfaces Coatings and FilmschemistryChemical engineeringvisual_artvisual_art.visual_art_medium0210 nano-technologydescription
Abstract Barium was deposited at room temperature on a thermal silicon oxide layer and the interfacial reaction was monitored by synchrotron induced photoemission (both core level and valence band). The first step of the growth consists of an interfacial reaction which leads to the formation of an interfacial silicate layer. The next step consists in formation of barium oxide while metallic barium occurs subsequently. The deposit can be also homogenized by annealing above 575 K. This results in the formation of several layers of silicate by consumption of silicon oxide. In the case of fractional coverage, subsequent annealing at 975 K induces the decomposition of barium silicate. However, such a decomposition process is strongly dependent on the initial film thickness. It can be avoided for deposits thicker than 3 eqML.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2011-09-01 | Surface Science |