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RESEARCH PRODUCT
Resonance Raman of oxygen dangling bonds in amorphous silicon dioxide
Sylvain GirardAntonino AlessiSimonpietro AgnelloYoucef OuerdaneAziz BoukenterMarco CannasDiego Di Francescasubject
Materials scienceAnalytical chemistrychemistry.chemical_element02 engineering and technologymedicine.disease_cause01 natural sciencesOxygenlaw.inventionsymbols.namesakelaw0103 physical sciencesmedicineGeneral Materials Science010306 general physicsSpectroscopyDangling bondResonance021001 nanoscience & nanotechnologyLaserFull width at half maximumchemistrysymbols0210 nano-technologyRaman spectroscopyRaman scatteringUltravioletdescription
We investigate the origin of a resonance Raman band induced by ionizing radiation in amorphous silicon dioxide (silica glass), which can be detected under ultraviolet laser excitation. A silica sample, rich of oxygen-excess related defects, was prepared by treating some length of a pure-silica-core multimode fiber in an O2 atmosphere (at high temperature and pressure) and by irradiating it with X-rays at 10 MGy(SiO2) dose. A micro-Raman study revealed a gaussian band peaking at 896 cm−1 with a full width at half maximum of 32 cm−1, which could be detected by exciting the sample with the 325-nm line of a HeCd laser. This spectral feature is absent in the Raman spectra performed with the 442-nm line of the same laser. On the basis of several experimental evidences and some complementary literature data, the 896 cm−1 band is assigned to a resonance Raman scattering of oxygen dangling bonds, often called non-bridging oxygen hole centers. Copyright © 2016 John Wiley & Sons, Ltd.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2016-08-03 | Journal of Raman Spectroscopy |